Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Alberto O. Adan"'
Publikováno v:
IEEE Power Electronics Magazine. 8:34-43
Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1],
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d61e08e259c84db13d5725e12739fcb
https://doi.org/10.1109/mpel.2021.3075674
https://doi.org/10.1109/mpel.2021.3075674
Publikováno v:
IEEE Power Electronics Magazine. 6:36-47
There is continuous activity to increase the efficiency and reduce the size of power electronic systems and modules developed for transportation and automotive electrification applications [1], [2]. One of the key requirements for achieving these obj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07267da2c40178f980e9d72733889777
https://doi.org/10.1109/mpel.2019.2909592
https://doi.org/10.1109/mpel.2019.2909592
Publikováno v:
2017 IEEE Transportation Electrification Conference and Expo (ITEC).
Structural and construction characteristics of leading edge high-temperature SiC semiconductor devices are analyzed in this paper. Representative power devices having Tj=175°C and Tj=200°C were selected for the study: Two 1200V-SiC-based devices: R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::239361de6de56b0b04e53b2500ccd75c
https://doi.org/10.1109/itec.2017.7993348
https://doi.org/10.1109/itec.2017.7993348
Publikováno v:
Japanese Journal of Applied Physics. 55:04EG01
A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R on · A = 500 mΩ·mm2 and a breakdown voltage of BV dss ∼ 1100 V is described. A novel high-power 30-A-class GaN-Si MOSFET casco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4d567b55c81b7889abf89a33531bbc
https://doi.org/10.7567/jjap.55.04eg01
https://doi.org/10.7567/jjap.55.04eg01
Publikováno v:
Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c27abf6bb3a601ed5f269dba3cc4eae
https://doi.org/10.7567/ssdm.1998.b-8-3
https://doi.org/10.7567/ssdm.1998.b-8-3
Publikováno v:
Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c947085c10bc139bd5dc87159535946b
https://doi.org/10.7567/ssdm.1997.b-3-1
https://doi.org/10.7567/ssdm.1997.b-3-1
Publikováno v:
Japanese Journal of Applied Physics; Apr2016, Vol. 55 Issue 4s, p1-1, 1p
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