Zobrazeno 1 - 10
of 200
pro vyhledávání: '"Alberto F, Morpurgo"'
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recen
Externí odkaz:
https://doaj.org/article/e2dd53fd4ec64885b9e2f01a8fc27811
Autor:
Lihuan Sun, Louk Rademaker, Diego Mauro, Alessandro Scarfato, Árpád Pásztor, Ignacio Gutiérrez-Lezama, Zhe Wang, Jose Martinez-Castro, Alberto F. Morpurgo, Christoph Renner
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most succes
Externí odkaz:
https://doaj.org/article/91d161ada2ff4257b2a515b9d803e328
Autor:
Xiaohanwen Lin, Fan Wu, Sara A. López-Paz, Fabian O. von Rohr, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Physical Review Research, Vol 6, Iss 1, p 013185 (2024)
We investigate the c-direction conduction in CrSBr in the linear regime, which is not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity, which is 10^{8}−10^{11} times larger th
Externí odkaz:
https://doaj.org/article/68456197880d44c1a0213a3a29401b1c
Autor:
Sara A. López-Paz, Zurab Guguchia, Vladimir Y. Pomjakushin, Catherine Witteveen, Antonio Cervellino, Hubertus Luetkens, Nicola Casati, Alberto F. Morpurgo, Fabian O. von Rohr
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
A 2D magnet CrSBr has attracted interest for applications in spintronics due to its high critical temperature and interesting magneto-electrical properties. Here the authors report a detailed study of its magnetic and structural phases and uncover a
Externí odkaz:
https://doaj.org/article/6634928b3ce54cd4943e7f4b01f1a3bd
Autor:
Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Here, the authors report the realization of light-emitting field-effect transistors based on van der Waals heterostructures with conduction and valence band edges at the Γ-point of the Brillouin zone, showing electrically tunable and material-depend
Externí odkaz:
https://doaj.org/article/419320679ee844ef8606d8fd42191b5a
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/9e67e9e46c074898a054feabf616b9ca
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Many standard techniques for investigating magnetic properties in the bulk are ill suited to atomically thin van der Waals materials. Here, Wang et al take a prototypical van der Waals ferromagnet, Chromium Bromide, and show how tunneling conductance
Externí odkaz:
https://doaj.org/article/f8e1782d469e4008a15a86a1f3b8c586
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple t
Externí odkaz:
https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b
Publikováno v:
Physical Review Research, Vol 3, Iss 4, p 043036 (2021)
Impressive progress in the control of atomically thin crystals is now enabling the realization of gated structures in which two electrodes are separated by atomic scale distances. The electrical capacitance of these structures is determined by phenom
Externí odkaz:
https://doaj.org/article/cd756fd6b8d94a5aac77699bb2701898
Autor:
Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez‐Lezama, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Advanced Materials.
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa9f77d409d096ef8bad44e53297d41
https://doi.org/10.1002/adma.202211653
https://doi.org/10.1002/adma.202211653