Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Albert Pang"'
Autor:
Zhen Sheng, Zhiqi Wang, Chao Qiu, Le Li, Albert Pang, Aimin Wu, Xi Wang, Shichang Zou, Fuwan Gan
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 6, Pp 2272-2277 (2012)
We present the design, fabrication, and measurement of a compact and low-loss multimode interference (MMI) coupler based on the silicon nanowire waveguide. The device is carefully designed to achieve both a good performance and a compact size by usin
Externí odkaz:
https://doaj.org/article/824b63f54021441e83222641163af3f4
Autor:
Fang Jingxun, Luo Zhigang, Albert Pang, Gong Yiqi, Wei Xiang, Xiang Guangxin, Zhou Haifeng, Bao Yu
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
In this paper, problems and solutions for bump defect due to the stopper-SiCN layer and scrubber are investigated, and the mechanism of the defect by SiCN is clarified. In the 28 nm node flow, it is found that skipping SiCN layer scrubber and increas
Publikováno v:
Materials Science in Semiconductor Processing. 41:485-490
Tiny defects may escape from in-line defect scan and pass WAT (Wafer Acceptance Test), CP (Chip Probing), FT (Final Test) and SLT (System Level Test). Chips with such kind of defects will cause reliability problem and impact revenue significantly. It
Autor:
Zhibiao Mao, Quanbo Li, Albert Pang, Lian Lu, Sifei Chan, Xiangguo Meng, Yu Zhang, Chen Fuhong
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
Gate formation for 28nm node is LELE (2 times Litho, 2 times etch process) approach, which is different from traditional poly LE (Litho-Etch) process. Poly line and poly LEC (line end cut) formed during the second Litho etch process. It is great chal
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
At 28nm technological node, shallow trench top CD becomes narrower for tighten transistors density. Smaller space CD makes process control more difficult, especially uniformity control. On the early stage of our STI etching process developing, dense/
Autor:
Chao Qiu, Aimin Wu, Fuwan Gan, Hao Li, Shichang Zou, Xi Wang, Le Li, Albert Pang, Wei Liu, Zhen Sheng
Publikováno v:
Journal of Lightwave Technology. 32:2303-2307
Low loss silicon waveguides are the key to the realization of high performance photonic integrated circuits. In this paper, fabrication, characterization and loss analysis of silicon nanowaveguides are presented. Silicon nanowaveguides are fabricated
Autor:
Hao Li, Albert Pang, Fuwan Gan, Shichang Zou, Le Li, Jing Wang, Wei Ling, Chao Qiu, Zhen Sheng, Aimin Wu, Xi Wang
Publikováno v:
Journal of Lightwave Technology. 31:4119-4125
We present the design, fabrication, and measurement of a high-speed carrier-depletion silicon optical modulator based on Mach-Zehnder Interferometer structure. Based on an equivalent circuit model, the traveling-wave electrode size and doping concent
Autor:
Jingxun Fang, Huijun Zhang, Fei Chen, Jianghua Leng, Huang Hai, Shirui Yu, Xubin Jing, Albert Pang, Long Zhao, Fang Li, Zhibiao Mao, Junhua Yan, Liang Zhang, Yu Zhang, Yu Liujiang, Cao Yongfeng, Yefang Zhu, Jun Huang
Publikováno v:
ECS Transactions. 52:625-633
This paper presents integration challenges associated with M1 to CT connection in Ultra low-k (ULK) Back-End-Of-Line (BEOL) interconnects for 40nm node and beyond. In advance IC fabrication, porous dielectric materials, such as BDII (related dielectr
Autor:
Le Li, Shichang Zou, Zhen Sheng, Chao Qiu, Xi Wang, Fuwan Gan, Zhiqi Wang, Albert Pang, Aimin Wu
Publikováno v:
IEEE Photonics Technology Letters. 24:1614-1617
Waveguide grating couplers based on complementary metal-oxide-semiconductor (CMOS) poly-silicon gate layers are designed and fabricated. Sharing the same etching profile as that of the CMOS poly-silicon gate layer, the fabrication of the grating coup
Autor:
Fuwan Gan, Aimin Wu, Chao Qiu, Le Li, Zhiqi Wang, Albert Pang, Shichang Zou, Zhen Sheng, Xi Wang
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 6, Pp 2272-2277 (2012)
We present the design, fabrication, and measurement of a compact and low-loss multimode interference (MMI) coupler based on the silicon nanowire waveguide. The device is carefully designed to achieve both a good performance and a compact size by usin