Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Albert Minj"'
Autor:
Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5
Externí odkaz:
https://doaj.org/article/5ea9232b349f46428755a2c055e14194
Autor:
Valentina Spampinato, Yuanyuan Shi, Jill Serron, Albert Minj, Benjamin Groven, Thomas Hantschel, Paul van derHeide, Alexis Franquet
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 7, Pp n/a-n/a (2023)
Abstract Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the semiconductor and its interfaces become increasingly more difficult to characterize ch
Externí odkaz:
https://doaj.org/article/304cf18b40c54a04bfe6c1a03031f001
Autor:
Quantong Li, Albert Minj, Yunzhi Ling, Changan Wang, Siliang He, Xiaoming Ge, Chenguang He, Chan Guo, Jiantai Wang, Yuan Bao, Zhuming Liu, Pierre Ruterana
Publikováno v:
Crystals, Vol 13, Iss 7, p 1027 (2023)
We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface disloca
Externí odkaz:
https://doaj.org/article/097b6cc4624a4b9387c9688e5dbcff41
Autor:
Jill Serron, Albert Minj, Valentina Spampinato, Alexis Franquet, Yevhenii Rybalchenko, Marie-Emmanuelle Boulon, Steven Brems, Henry Medina Silva, Yuanyuan Shi, Benjamin Groven, Renan Villarreal, Thierry Conard, Paul van der Heide, Thomas Hantschel
Publikováno v:
ACS Applied Materials & Interfaces. 15:26175-26189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43816c8576f735bc424441f4109b16ac
https://doi.org/10.1021/acsami.3c03057
https://doi.org/10.1021/acsami.3c03057
Autor:
Albert Minj, Karen Geens, Hu Liang, Han Han, Céline Noël, Benoit Bakeroot, Kristof Paredis, Ming Zhao, Thomas Hantschel, Stefaan Decoutere
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de47323292a898a1eca10264eba254d
https://doi.org/10.1103/physrevapplied.19.034081
https://doi.org/10.1103/physrevapplied.19.034081
Autor:
Inge Asselberghs, Vivek Mootheri, Albert Minj, Dennis Lin, Alessandra Leonhardt, Goutham Arutchelvan, Marc Heyns, Iuliana Radu
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS 2 , w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0920f610d34eed6b21dc56cf7f4a6439
https://doi.org/10.1109/iitc51362.2021.9537337
https://doi.org/10.1109/iitc51362.2021.9537337
Autor:
Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet
Publikováno v:
Applied Physics Letters. 121:081904
In this work, we study the electronic properties of defects in the LaAlO3/SrTiO3 heterostructure, which is known to host a high mobility two-dimensional electron gas (2DEG) at the interface. This 2DEG also shows photoconductance, which could be relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e838a0f4c2f597676c2fc96a775f56f1
https://doi.org/10.1063/5.0101255
https://doi.org/10.1063/5.0101255
Publikováno v:
Journal of physical chemistry C, 124(46), 25331-25340. American Chemical Society
Electric force microscopy (EFM)-based methods have the capacity to probe surface potential, dielectric properties, and surface charges. It can be robustly used for analyzing charge-transfer mechani...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58ea1ff7beae3373424c103e9ab62dcf
https://research.utwente.nl/en/publications/0b34bd40-8c05-4827-9879-56771fc312b9
https://research.utwente.nl/en/publications/0b34bd40-8c05-4827-9879-56771fc312b9
Autor:
Laurence Méchin, Jaume Gazquez, Blai Casals, Albert Minj, Yu Chen, Gervasi Herranz, Bruno Guillet, Y. Lechaux
Publikováno v:
Physical Review Letters. 124
Persistent photoconductance is a phenomenon found in many semiconductors, by which light induces long-lived excitations in electronic states. Commonly, persistent photoexcitation leads to an increase of carriers (accumulation), though occasionally it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::445f950c4636c931415a9d4ddc5d216f
https://doi.org/10.1103/physrevlett.124.246804
https://doi.org/10.1103/physrevlett.124.246804
Autor:
Tian-Li Wu, P. Van Marcke, Y.-H. Chen, G. Van den bosch, S. R. C. McMitchell, P. van der Heide, B. Kaczer, Paola Favia, Umberto Celano, Albert Minj, Nicolo Ronchi, J. Van Houdt, K. Banerjee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We correlate the concentration and configuration of electrical defects in ferroelectric Si -doped HfO 2 (FE- HfO 2 ) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b7157586db80d256c462981f93557aa
https://doi.org/10.1109/vlsitechnology18217.2020.9265098
https://doi.org/10.1109/vlsitechnology18217.2020.9265098