Zobrazeno 1 - 10
of 122
pro vyhledávání: '"Albert J. P. Theuwissen"'
Autor:
Xiaoliang Ge, Albert J. P. Theuwissen
Publikováno v:
Sensors, Vol 18, Iss 3, p 707 (2018)
This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range,
Externí odkaz:
https://doaj.org/article/f5f3803942f54d17b1369ffb49f47c2c
Autor:
Liqiang Han, Albert J. P. Theuwissen
Publikováno v:
IEEE Solid State Circuits Letters, 4
This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional f
Autor:
Albert J. P. Theuwissen, Shuang Xie
Publikováno v:
IEEE Sensors Journal, 20(1)
This paper presents methodologies for suppressing the spatial and the temporal noise in a CMOS image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise ca
Autor:
Shuang Xie, Albert J. P. Theuwissen
Publikováno v:
IEEE Sensors Journal. 19:7849-7860
This paper proposes various types of on-chip smart temperature sensors, intended for thermal compensation of dark current in CMOS image sensors (CIS). It proposes four different architectures of metal–oxide–semiconductor (MOS)-based and bipolar j
Autor:
Fei Wang, Albert J. P. Theuwissen
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 66:930-940
In this paper, different methodologies are employed to improve the linearity performance of a prototype CMOS image sensor (CIS). First, several pixel structures, including a novel pixel design based on a capacitive trans-impedance amplifier (CTIA), a
Autor:
Albert J. P. Theuwissen
Publikováno v:
ISSCC
2021 IEEE International Solid-State Circuits Conference, ISSCC 2021-Digest of Technical Papers
2021 IEEE International Solid-State Circuits Conference, ISSCC 2021-Digest of Technical Papers
One of the fastest growing markets in the semiconductor industry is being driven by businesses in the solid-state imaging sector. An overview of the world-wide CIS (CMOS Image Sensor) market is illustrated in Figure 1.4.1. The actual CAGR (compound a
Autor:
Albert J. P. Theuwissen, Accel Abarca
Publikováno v:
Micromachines
Micromachines, 11(7)
Volume 11
Issue 7
Micromachines, Vol 11, Iss 665, p 665 (2020)
Micromachines, 11(7)
Volume 11
Issue 7
Micromachines, Vol 11, Iss 665, p 665 (2020)
This article presents in-pixel (of a CMOS image sensor (CIS)) temperature sensors with improved accuracy in the spatial and the temporal domain. The goal of the temperature sensors is to be used to compensate for dark (current) fixed pattern noise (F
Autor:
Shuang Xie, Albert J. P. Theuwissen
Publikováno v:
IEEE Sensors Journal, 20(5)
This paper presents a CMOS image sensor (CIS) with a zoom ADC, to quantize in-pixel temperature sensors, as well as for faster readout speed of the image pixels while maintaining low quantization noise. The proposed 15 bit zoom ADC has a 4 bit Unit C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51a865461d3d343d06d57b9b84b3456f
http://resolver.tudelft.nl/uuid:ae6f26ef-2327-4a03-9f21-fc9f1b35c664
http://resolver.tudelft.nl/uuid:ae6f26ef-2327-4a03-9f21-fc9f1b35c664
Autor:
Shuang Xie, Albert J. P. Theuwissen
Publikováno v:
IEEE Transactions on Circuits and Systems Part 2: Express Briefs, 67(6)
This brief proposes a successive approximation register (SAR) analog-to-digital converter (ADC) whose readout speed is improved by 33%, through applying a digital error correction (DEC) method, compared to an alternative without using the DEC techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dadf571e748ed078b4eb8a5bc936092
http://resolver.tudelft.nl/uuid:d079392b-c89e-4ac7-a493-cbd75a752ee0
http://resolver.tudelft.nl/uuid:d079392b-c89e-4ac7-a493-cbd75a752ee0
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:2970-2981
This paper presents a highly linear CMOS image sensor (CIS) designed in a commercial 0.18- $\mu$ m CIS technology. A new type of pixel is proposed based on the linearity analysis of a conventional 4T active pixel. The new type of pixel can mitigate t