Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Albert Hilton"'
Autor:
Austin Shallcross, Krishnamurthy Mahalingam, Eunsung Shin, Guru Subramanyam, Md Shahanur Alam, Tarek Taha, Sabyasachi Ganguli, Cynthia Bowers, Benson Athey, Albert Hilton, Ajit Roy, Rohan Dhall
Publikováno v:
Frontiers in Electronics, Vol 3 (2022)
Memristor devices fabricated using the chalcogenide Ge2Te3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-s
Externí odkaz:
https://doaj.org/article/bd5535c3466548ef93c3e09f21856204
Publikováno v:
Crystals, Vol 9, Iss 7, p 339 (2019)
In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its sy
Externí odkaz:
https://doaj.org/article/a3a25b129d834ee9a2cbc12722741aa7
Publikováno v:
MRS Communications. 11:288-294
This work investigates the ferroelectric behavior of barium titanate (BaTiO3) with and without annealing of the deposited film. 105.7 nm of BaTiO3 was deposited via pulsed laser deposition on a niobium-doped strontium titanate substrate. 50 nm of tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0cf647954930b6f219b927475d7688b
https://doi.org/10.1557/s43579-021-00030-2
https://doi.org/10.1557/s43579-021-00030-2
Autor:
Nicholas R. Glavin, Albert Hilton, Michael J. Motala, Christopher Muratore, Eric R. Heller, Eric W. Blanton, Kelson D. Chabak, Michael Snure, Jeff L. Brown, Katherine Burzynski, Michael F. Durstock
Publikováno v:
ACS Applied Materials & Interfaces. 12:21837-21844
Mechanical transfer of high-performing thin-film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore nontraditional manufacturing approaches, and paves the way for soft, conformal, and flexible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82337ba927712d86c8bb3da148f2bbee
https://doi.org/10.1021/acsami.0c02818
https://doi.org/10.1021/acsami.0c02818
Publikováno v:
Microscopy and Microanalysis. 27:436-437
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c065e8a509db9e570565850e5f6f6df4
https://doi.org/10.1017/s1431927621002063
https://doi.org/10.1017/s1431927621002063
Publikováno v:
IEEE Transactions on Electron Devices. 65:59-63
We report on a comparison of electroluminescence (EL) spectra measured in plan view versus on a cross-sectioned face of the same AlGaN/GaN device for the first time. Because EL emission can be more intense under optically opaque metal structures, a d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2aa65f018d4a495f3816f25cd94a769
https://doi.org/10.1109/ted.2017.2775101
https://doi.org/10.1109/ted.2017.2775101
Publikováno v:
Crystals
Volume 9
Issue 7
Crystals, Vol 9, Iss 7, p 339 (2019)
Volume 9
Issue 7
Crystals, Vol 9, Iss 7, p 339 (2019)
In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76b7413bc848342cbf82283c171558bf
Publikováno v:
IEEE Transactions on Electron Devices. 63:1459-1463
We report an electroluminescence (EL) microscopy study of operating cross-sectioned AlGaN/GaN high-electron mobility transistors. By examining devices in a cross-sectional view, the distribution and intensity of photons emitted from underneath the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3083250dcfeb99451640e733b65d33
https://doi.org/10.1109/ted.2016.2532475
https://doi.org/10.1109/ted.2016.2532475
Publikováno v:
Journal of Applied Physics. 128:075705
The development of high-quality gallium nitride (GaN) high electron mobility transistors (HEMTs) has provided opportunities for the next generation of high-performance radio frequency and power electronics. Operating devices with smaller length scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75093782c64dbcda114d8ba43e0f6ef2
https://doi.org/10.1063/5.0014407
https://doi.org/10.1063/5.0014407
Autor:
Curtis M. McKinion, Ajit K. Roy, Albert Hilton, John B. Ferguson, Amanda M. Schrand, Eric R. Heller, Sangwook Sihn, Steven R. Dooley
Publikováno v:
Fracture, Fatigue, Failure and Damage Evolution, Volume 6 ISBN: 9783319958781
An alternative approach was taken to improve the high-g shock tolerance of electronic devices. Rather than stiffening electronic devices with potting, the electronic device mass was reduced by an appropriate amount to match the compliance of the devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e321b9278f7b49a539e4b674d0c1fe9
https://doi.org/10.1007/978-3-319-95879-8_17
https://doi.org/10.1007/978-3-319-95879-8_17
