Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Albert Heberle"'
Publikováno v:
IEEE Journal of Quantum Electronics. 48:1065-1068
Spatially and spectrally resolved near-field images of the transverse mode patterns of vertical cavity surface emitting lasers (VCSELs) are obtained by confocal microscopy with optical spectrum analyzer. A non-circular internal effective index profil
Publikováno v:
2012 17th Opto-Electronics and Communications Conference.
A graphene-based saturable absorber was fabricated by optically depositing layers of graphene onto the end tip of single mode fiber, and it was used to passively Q-switch thulium-doped fiber laser at 2 µm pumped by EDFA. The spectrum of the graphene
Autor:
Gordon Charles Brown, Yabo Li, Chung-En Zah, Wayne Liu, Albert Heberle, Dmitri Vladislavovich Kuksenkov, Douglas Llewellyn Butler, Garrett Andrew Piech, Nick Visovsky, Jin Li, Dragan Pikula
Publikováno v:
SPIE Proceedings.
The wavelength tunable 1060-nm distributed Bragg reflector (DBR) laser chip consists of three sections: a gain section for lasing, and phase and DBR sections for wavelength control. A micro-heater is lithographically integrated on the top of the DBR
Autor:
Gordon Charles Brown, Dragan Pikula, Yabo Li, Garrett Andrew Piech, Wayne Liu, Chung-En Zah, Albert Heberle, Douglas Llewellyn Butler, Nick Visovsky, Jin Li
Publikováno v:
IEEE Photonic Society 24th Annual Meeting.
We report a compact green light source consisting of a 1060-nm DBR laser, a periodically poled lithium niobate crystal waveguide and an adaptive optic element consisting of a micro-electro-mechanical system actuator. Up to 350 mW optical power at 530
Publikováno v:
Optics Letters. 36:3750
This Letter presents an all-fiber mode-locked thulium-doped fiber ring oscillator based on nonlinear polarization evolution (NPE). Pumped by an erbium-doped fiber amplified spontaneous emission source, the construction of the laser cavity consisting
Publikováno v:
Applied Physics Letters. 99:041117
We present a detailed experimental study of optical property of green InGaN quantum wells and optically pumped lasers, with cleaved m-plane facets and a lasing wavelength in the range of 520-530 nm, grown on semipolar (11-22) planes. Taking advantage
Publikováno v:
Applied Physics Express. 3:122104
We present a new characterization method for internal optical waveguide loss of blue, aquamarine, and green group-III–nitride laser diodes from as-grown wafers without need for further fabrication. This approach relies on excitation-position depend