Výsledky vyhledávání - "Albert Crespo-Yepes"

Akademický článek

On the Aging of OTFTs and Its Impact on PUFs Reliability

Autor: Marc Porti, Gerard Palau, Albert Crespo-Yepes, August Arnal Rus, Simon Ogier, Eloi Ramon, Montserrat Nafria

Publikováno v: Micromachines, Vol 15, Iss 4, p 443 (2024)

Given the current maturity of printed technologies, Organic Thin-Film Transistors (OTFT) still show high initial variability, which can be beneficial for its exploitation in security applications. In this work, the process-related variability and agi

Externí odkaz: https://doaj.org/article/f135aef7506f4cc9b817766e580d436c

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Exploitation of Otfts Variability for Pufs Implementation and Impact of Aging

Autor: Marc Porti, Sergi Claramunt, Gerard Palau, August Arnal, Albert Crespo-Yepes, S. Ogier, Eloi Ramon, Montserrat Nafria

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a3c5ad408b4512fa7f1530d717399831
https://doi.org/10.2139/ssrn.4429245

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Stochastic resonance effect in binary STDP performed by RRAM devices

Autor: Emili Salvador, Rosana Rodriguez, Javier Martin-Martinez, Albert Crespo-Yepes, Enrique Miranda, Montserrat Nafria, Antonio Rubio, Vasileios Ntinas, Georgios Ch. Sirakoulis

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e64f493bef24dfad1647d2560aa240b0
https://hdl.handle.net/2117/381472

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Aging in CMOS RF linear power amplifiers: an experimental study

Autor: Albert Crespo-Yepes, Javier Martin-Martinez, Enrique Barajas, Xavier Aragones, R. Rodriguez, Montserrat Nafria, Diego Mateo

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da062c0c83c73c1ee31b5e773b93cfdc
https://hdl.handle.net/2117/343811

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Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects

Autor: Rosana Rodriguez, M. Pedro, Javier Martin-Martinez, Vasileios Ntinas, Antonio Rubio, Albert Crespo-Yepes, Montserrat Nafria, Emili Salvador Aguilera, Georgios Ch. Sirakoulis

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45d92db51d21c435c05ab2b3d2ce8298

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Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs

Autor: Albert Crespo-Yepes, R. Rodriguez, Javier Martin-Martinez, Xavier Aymerich, M. Nafria

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b3c12c0996777031b7899a81174e290
http://hdl.handle.net/2072/407332

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Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation

Autor: Xavier Aragonès, R. Rodriguez, Albert Crespo-Yepes, Diego Mateo, Enrique Barajas, Javier Martin-Martinez, Montserrat Nafria

Publikováno v: IRPS

The high-frequency operation of RF circuits poses additional challenges to the prediction of their reliability during the initial design phase. Among them, the availability of device compact models that describe their aging under RF conditions and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b3ed4d44d625efc5c26d724b01190523
https://doi.org/10.1109/irps45951.2020.9129301

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DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries

Autor: Rosana Rodriguez, Lluis Teres, August Arnal, Eloi Ramon, Albert Crespo-Yepes, Montserrat Nafria

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-processability than their Si-based MOS counterparts, which make them suitable for new applications where those characteristics are an advantage. However,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a39ebbcc1ac7006c4cd59df45a006d
https://ddd.uab.cat/record/248843

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Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO

Autor: Giovanni, Vescio, Gemma, Martín, Albert, Crespo-Yepes, Sergi, Claramunt, Daniel, Alonso, Julian, López-Vidrier, Sonia, Estradé, Marc, Porti, Rosana, Rodríguez, Francesca, Peiró, Albert, Cornet, Albert, Cirera, Montserrat, Nafría

Publikováno v: ACS applied materialsinterfaces. 11(26)

Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::d327a5850577512914c0ec8622c6b1f1
https://pubmed.ncbi.nlm.nih.gov/31180626

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Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling

Autor: Enrique Barajas, R. Rodriguez, Diego Mateo, Montserrat Nafria, Albert Crespo-Yepes, Javier Martin-Martinez, Xavier Aragones

Publikováno v: ISCAS
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance of the topology selection

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99db2c34198b12d77e589ee05432b8ff
https://doi.org/10.1109/iscas.2019.8702100

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