Zobrazeno 1 - 10
of 936
pro vyhledávání: '"Alberigi Quaranta, A."'
Autor:
A. Alberigi Quaranta, P. Vanni, Claudio Canali, Felice Nava, Antonio Castaldini, C. Lanzieri, Anna Cavallini
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 61:432-437
SI GaAs Schottky barrier detectors have been irradiated with high energy protons (24 GeV/c, fluence up to 1.20 × 10 14 p/cm 2 ). The detectors have been characterized in terms of I–V curves and charge collection efficiency for incident α particle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c0fe08f7d29b6681adba52c1d324351
https://doi.org/10.1016/s0920-5632(97)00598-7
https://doi.org/10.1016/s0920-5632(97)00598-7
Publikováno v:
Il Nuovo Cimento B Series 11. 106:941-944
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf8c87562351b3d8d4446f8429b5f8c
https://doi.org/10.1007/bf02723188
https://doi.org/10.1007/bf02723188
Publikováno v:
Journal of Materials Science: Materials in Electronics. 1:118-122
Investigations have been carried out on the electrical properties of nickel-based films prepared from air-fireable pastes on alumina substrates. In particular, magnetoresistive effects have been studied as a function of temperature, strength and dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfab2dbc6de8531e3da6d155e44179d
https://doi.org/10.1007/bf00694920
https://doi.org/10.1007/bf00694920
Publikováno v:
IEEE Transactions on Nuclear Science; 1966, Vol. 13 Issue 1, p752-756, 5p
Autor:
Alessandro Alberigi Quaranta
Publikováno v:
Documentación Administrativa, Iss 199 (1983)
Externí odkaz:
https://doaj.org/article/5dfa72d872354b16b141636197d60ce0
Autor:
Giampiero Ottaviani, L. Stagni, Filippo Nava, P. Cantoni, P.F. Manfredi, Stefano Frabboni, P. L. Frabetti, A. Alberigi Quaranta, G. Queirolo, Rita Tonini
An investigation has been made into the behaviour of high-purity silicon (HP-Si) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 kΩcm. The investigation is centred on standard bipolar processes based on ion i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::870965cf19ad02bded8b41ae58a5c2db
https://hdl.handle.net/11380/744089
https://hdl.handle.net/11380/744089
