On-Surface Synthesis of Boroxine-Based Molecules

Autor: Elia Turco, Matus Stredansky, Roberto Costantini, Javier A. Martinez, Martina Dell’Angela, Elena Zerbato, Daniele Toffoli, Giovanna Fronzoni, Alberto Morgante, Luca Floreano, Albano Cossaro

Publikováno v: Chemistry, Vol 3, Iss 4, Pp 1401-1410 (2021)

The on-surface synthesis of boroxine-containing molecules can be a convenient method of introducing specific functionalities. Here, we show the validity of a previously described synthesis protocol on the Au (111) surface by applying it to a differen

Externí odkaz: https://doaj.org/article/5bdf6968ec554f9fabe5a93c2de26e1e

Computational NEXAFS Characterization of Molecular Model Systems for 2D Boroxine Frameworks

Autor: Daniele Toffoli, Elisa Bernes, Albano Cossaro, Gabriele Balducci, Mauro Stener, Silvia Mauri, Giovanna Fronzoni

Publikováno v: Nanomaterials, Vol 12, Iss 9, p 1610 (2022)

The electronic properties of 2D boroxine networks are computationally investigated by simulating the NEXAFS spectra of a series of molecular models, with or without morphologic defects, with respect to the ideal honeycomb structure. The models repres

Externí odkaz: https://doaj.org/article/8a1db817e0e34d25ba08d687705741d9

Nanoscale Phase Separation and Lattice Complexity in VO2: The Metal–Insulator Transition Investigated by XANES via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Autor: Augusto Marcelli, Marcello Coreno, Matus Stredansky, Wei Xu, Chongwen Zou, Lele Fan, Wangsheng Chu, Shiqiang Wei, Albano Cossaro, Alessandro Ricci, Antonio Bianconi, Alessandro D’Elia

Publikováno v: Condensed Matter, Vol 2, Iss 4, p 38 (2017)

Among transition metal oxides, VO2 is a particularly interesting and challenging correlated electron material where an insulator to metal transition (MIT) occurs near room temperature. Here we investigate a 16 nm thick strained vanadium dioxide film,

Externí odkaz: https://doaj.org/article/1d73a7e8e1b6475b8c8077e1b3a05283

Deciphering Electron Interplay at the Fullerene/Sputtered TiOx Interface: A Barrier-Free Electron Extraction for Organic Solar Cells

Autor: Nicolas Casaretto, Dylan Amelot, Hervé Cruguel, Nadine Witkowski, Albano Cossaro, Mehrad Ahmadpour, Luca Floreano, Quim Ros, Morten Madsen

Publikováno v: Amelot, D, Ahmadpour, M, Ros, Q, Cruguel, H, Casaretto, N, Cossaro, A, Floreano, L, Madsen, M & Witkowski, N 2021, ' Deciphering electron interplay at the Fullerene/Sputtered TiO x Interface : a barrier-free electron extraction for organic solar cells ', ACS Applied Materials and Interfaces, vol. 13, no. 16, pp. 19460-19466 . https://doi.org/10.1021/acsami.1c01966

Organic photovoltaics (OPVs) technology now offers power conversion efficiency (PCE) of over 18% and is one of the main emerging photovoltaic technologies. In such devices, titanium dioxide (TiOx) has been vastly used as an electron extraction layer,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3553a6b06ef849ccb2d268f6478efc99
https://doi.org/10.1021/acsami.1c01966

Bottom-up synthesis of nitrogen-containing graphene nanoribbons from the tetrabenzopentacene molecular motif

Autor: Zhijing Feng, Gregor Bavdek, Wilson Ho, Giovanni Comelli, Peter J. Wagner, Amir Mazaheripour, Albano Cossaro, Gregory Czap, Alberto Morgante, Alon A. Gorodetsky, Alberto Verdini, Luca Floreano, Dean Cvetko, David J. Dibble, Gregor Kladnik

Publikováno v: Carbon 170 (2020): 677–684. doi:10.1016/j.carbon.2020.07.018
info:cnr-pdr/source/autori:Feng, Zhijing; Mazaheripour, Amir; Dibble, David J.; Wagner, Peter; Czap, Gregory; Kladnik, Gregor; Cossaro, Albano; Verdini, Alberto; Floreano, Luca; Bavdek, Gregor; Ho, Wilson; Comelli, Giovanni; Cvetko, Dean; Morgante, Alberto; Gorodetsky, Alon A./titolo:Bottom-up synthesis of nitrogen-containing graphene nanoribbons from the tetrabenzopentacene molecular motif/doi:10.1016%2Fj.carbon.2020.07.018/rivista:Carbon/anno:2020/pagina_da:677/pagina_a:684/intervallo_pagine:677–684/volume:170

Atomically-defined graphene nanoribbons (GNRs), which are narrow strips of graphene that feature a quantum confinement-induced bandgap, have shown great promise for applications in the next generation of semiconductor devices. Although numerous studi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::926036dd9025bcf8f868ef753625464f
https://doi.org/10.1016/j.carbon.2020.07.018