Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Alban Zaka"'
Autor:
Ruchil Jain, Felix Holzmueller, Peter Baars, Alban Zaka, Elodie Ebrard, Ketankumar Tailor, Tom Herrmann, Damien Angot
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong
Publikováno v:
Solid-State Electronics. 199:108512
Autor:
D. Lipp, Y. Raffel, A. Jayakumar, R. Olivo, R. Pfuetzner, R. Illgen, A. Muehlhoff, Jan Hoentschel, L. Pirro, Michael Otto, O. Zimmerhackl, Alban Zaka, Konrad Seidel
Publikováno v:
IRPS
In this work buried channel devices were successfully integrated in HKMG. Analog, noise and reliability performance have been reported and compared to a surface device. The devices were processed to have the same V Tsat for the nominal geometry of a
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade
Autor:
Xinwang Liu, Tom Herrmann, G. Festes, B. Bertello, Yuri Tkachev, Boris Bayha, M. Duggan, Ralf Richter, Alban Zaka, Decobert Catherine, Thomas Melde, S. Wittek, Stefan Dunkel, N. Do, P. Ghazav, N. Bollon, F. Mauersberger, Sven Beyer, Kim Jinho, Viktor Markov, B. Muller, Zhou Feng, S. Jourba, M. Trentzsch
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
This paper presents the characterization and reliability results achieved on 1.8 V 4 Mb flash array built around 3rd generation Embedded SuperFlash® (ESF3) memory cell featuring high-k metal gate (HKMG) select transistor and embedded into Low-Power
Autor:
Vishal Ganesan, Tom Herrmann, Sagar P Karalkar, Kyongjin Hwang, Bhoopendra Singh, Sevashanmugam Marimuthu, Robert Gauthier, Alban Zaka
Publikováno v:
IRPS
An effective design for self-protection medium voltage nMOS with modification of drain junction in 28nm high voltage CMOS technology is presented. Pull down nMOS of the output driver is the main electrostatic discharge path. Design of Source/Drain ju
Autor:
Klaus Hempel, R. Taylor, Tianbing Chen, Alexis Divay, Tom Herrmann, Alban Zaka, Patrick James Artz, Yogadissen Andee, Steffen Lehmann, L. Pirro, Zhixing Zhao, Carsten Grass, Jan Hoentschel, Ricardo Sousa, Juergen Faul, David Harame, J. Mazurier, Luca Lucci
Publikováno v:
ESSDERC
This paper proposes three methods of reducing device gate resistance and parasitic capacitance while boosting transconductance of MOSFET on 22FDX®. The f MAX can be improved by 50% and up to 75% for NFET and PFET with respect to a standard 2.0µm fi
Autor:
Yogadissen Andee, Tom Herrmann, Alban Zaka, Zhixing Zhao, Nandha Kumar Subramani, Steffen Lehmann
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined
Autor:
Tom Herrmann, Maximilian Juttner, Tim Seiler, W. Klix, R. Stenzel, Alban Zaka, Jan Hoentschel, L. Pirro
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
A comparison of CMOS devices with best in class noise behavior and low power consumption for analog/mixed signal applications has been achieved by extensive TCAD simulations. The intrinsic gain gm/ID of FDSOI transistors was optimized by several proc