Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Alatise, Olayiwola M."'
In high current applications that use several parallel-connected SiC MOSFETs (e.g., automotive traction inverters), optimal current sharing is integral to overall system reliability. Threshold voltage (VTH) variation in SiC MOSFETs is a prevalent rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::3d1b74137493de60663cbebdaaed4002
http://wrap.warwick.ac.uk/168188/1/WRAP-electrothermal-modelling-measurements-parallel-connected-VTH-mismatched-SiC-MOSFETs-under-inductive-load-switching-2022.pdf
http://wrap.warwick.ac.uk/168188/1/WRAP-electrothermal-modelling-measurements-parallel-connected-VTH-mismatched-SiC-MOSFETs-under-inductive-load-switching-2022.pdf
Publikováno v:
In Microelectronic Engineering 2010 87(11):2196-2199
Autor:
Gonzalez, Jose Ortiz, Perez-Estevez, Diego, Wu, Ruizhu, Doval-Gandoy, Jesus, Alatise, Olayiwola M.
Publikováno v:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).
This paper presents a comparative analysis of the estimated power losses and device junction temperatures in a two-level grid-tied converter commanded by a linear current controller with a pulse-with-modulator (PWM) or a finite-control-set (FCS) mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8323d91b0949b3bb3bd8279cf786ca76
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570585
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570585
Autor:
Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Mellor, Phil, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel
In this paper, dynamic switching performance at 1st quadrant and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) trench, double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::6a3eb0f67476c3f11c45168701c39070
http://wrap.warwick.ac.uk/162605/1/WRAP-Investigation-performance-double-trench-SiC-Power-MOSFETs-forward-reverse-quadrant-operation-2021.pdf
http://wrap.warwick.ac.uk/162605/1/WRAP-Investigation-performance-double-trench-SiC-Power-MOSFETs-forward-reverse-quadrant-operation-2021.pdf
Autor:
Shen, Chengjun, Jahdi, Saeed, Mellor, Phil, Yuan, Xibo, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel
4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV. Compared with silicon power BJTs, they particularly benefit from a large current gain to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::01276ada0b42ae4064b98255d37ef787
http://wrap.warwick.ac.uk/162611/1/WRAP-Analysis-dynamic-transients-high-voltage-silicon-4H-SiC-NPNBJTs-2021.pdf
http://wrap.warwick.ac.uk/162611/1/WRAP-Analysis-dynamic-transients-high-voltage-silicon-4H-SiC-NPNBJTs-2021.pdf
Autor:
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Aliyu, A. M., Castellazzi, A.
Pressure contact packages have demonstrated an improved reliability for silicon devices due to the elimination of the weak elements of the packaging, namely wirebonds and solder. This packaging approach has not yet been widely studied for SiC devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::da973b1ff0d9387b2c25359d2b555298
http://wrap.warwick.ac.uk/91491/1/WRAP-pressure-contact-multi-chip-packaging-diodes-Ortiz-2017.pdf
http://wrap.warwick.ac.uk/91491/1/WRAP-pressure-contact-multi-chip-packaging-diodes-Ortiz-2017.pdf
Autor:
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah, Bailey, Christopher
Fast switching SiC Schottky diodes are known to exhibit significant output oscillations and electromagnetic emissions in the presence of parasitic inductance from the package/module connections. Furthermore, solder pad delamination and wirebond lift-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::bdcc4f6ed35f890d828f41300fdea59f
http://wrap.warwick.ac.uk/86129/1/WRAP_engineering-210217-pid4330033_lr.pdf
http://wrap.warwick.ac.uk/86129/1/WRAP_engineering-210217-pid4330033_lr.pdf
Autor:
Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G., Majhi, Prashant
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate stacks has been characterized alongside that of unstrained-Si pMOSFETs. Strained-SiGe devices exhibit 80% mobility enhancement compared with Si contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::5223a424a196617e6039a3a7287ff2fc
http://wrap.warwick.ac.uk/37108/1/WRAP_Alatise_1070562-es-091211-ieee_ted_performance_enhancements_strained_sige_pmosfets.pdf
http://wrap.warwick.ac.uk/37108/1/WRAP_Alatise_1070562-es-091211-ieee_ted_performance_enhancements_strained_sige_pmosfets.pdf
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push-pull inverting amplifier is assessed by technology-computer-aided-design (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::73d306080f3c7d58b09d4a9b5483d2d6
http://wrap.warwick.ac.uk/37106/1/WRAP_Alatise2_1070562-es-091211-ieee_ted_cmos_inverter_self_heating.pdf
http://wrap.warwick.ac.uk/37106/1/WRAP_Alatise2_1070562-es-091211-ieee_ted_cmos_inverter_self_heating.pdf
Autor:
Alatise, Olayiwola M.1 Olayiwola.alatise@nxp.com, Olsen, Sarah H.2, Cowern, Nick E. B.2, O'Neill, Anthony G.2, Majhi, Prashant3
Publikováno v:
IEEE Transactions on Electron Devices. Oct2009, Vol. 56 Issue 10, p2277-2284. 8p. 1 Diagram, 10 Graphs.