Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alan Y. Otero C"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 681-686 (2023)
We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the electrical basic parameters of the transistor, such as dr
Externí odkaz:
https://doaj.org/article/632dff39426843bbbcf0c2bc50f74c64
Publikováno v:
2022 IEEE Latin American Electron Devices Conference (LAEDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe3316ccbc0f2a8d9a3e120b980a4bb2
https://doi.org/10.1109/laedc54796.2022.9908206
https://doi.org/10.1109/laedc54796.2022.9908206