Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Alan V. Hayes"'
Publikováno v:
Journal of Magnetism and Magnetic Materials. 286:181-185
Ion beam etching (i.e. ion milling) is the preferred patterning method for metallic magnetic multilayers. We explore the extendibility and fundamental limits of the technique with regard to z-resolution (i.e. etched depth). We studied the atomic relo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a239279f9fd0947cbb01c0829d87b2
https://doi.org/10.1016/j.jmmm.2004.09.025
https://doi.org/10.1016/j.jmmm.2004.09.025
Autor:
Arun John Kadaksham, Steve Trigg, Long He, Frank Goodwin, Patrick A. Kearney, Alin Antohe, Milton Godwin, Alan V. Hayes, Al Weaver
Publikováno v:
SPIE Proceedings.
For full commercialization, extreme ultraviolet lithography (EUVL) technology requires the availability of EUV mask blanks that are free of defects. This remains one of the main impediments to the implementation of EUV at the 22 nm node and beyond. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c5917451596c5a5a96f5b48a328a3c
https://doi.org/10.1117/12.2048541
https://doi.org/10.1117/12.2048541
Autor:
A.I. Rukovishnikov, E. Ostan, Alan V. Hayes, Boris L. Druz, S. DiStefano, Viktor Kanarov, N.M. Rossukanyi, A.V. Khomich, V.I. Polyakov
Publikováno v:
Diamond and Related Materials. 7:965-972
Diamond-like carbon (DLC) films with 12–25 GPa hardnesses and 3–400 nm thicknesses were deposited on silicon, Al2O3-TiC substrates, and permalloy coated with Al2O3-TiC substrates using a broad, uniform ion beam from an RF, inductively coupled, CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fccf638239a22e20a4831537e7778ba
https://doi.org/10.1016/s0925-9635(97)00338-5
https://doi.org/10.1016/s0925-9635(97)00338-5
Autor:
E. Ostan, A.I. Rukovishnicov, V. D. Frolov, N.M. Rossukanyi, Vitaly I. Konov, Alan V. Hayes, Boris L. Druz, V.I. Polyakov, A.V. Karabutov
Publikováno v:
Diamond and Related Materials. 7:695-698
Diamond-like carbon (DLC) films 4–400 nm thick were deposited on conductive n -Si and metal substrates using direct ion beam deposition from an RF inductively coupled CH 4 -plasma (ICP) source. The field electron emission of the films was examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37c949187975a98bd24e632170eac3c2
https://doi.org/10.1016/s0925-9635(97)00168-4
https://doi.org/10.1016/s0925-9635(97)00168-4
Publikováno v:
Surface and Coatings Technology. :708-714
In this paper, we describe a robust process for depositing diamond-like carbon (DLC) films from an r.f. inductively coupled CH4-plasma source (18 cm in diameter). This process represents a significant improvement in ability to carry out reliable faul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245ecd9fa643f0b481b91aa0324980d0
https://doi.org/10.1016/s0257-8972(96)02970-2
https://doi.org/10.1016/s0257-8972(96)02970-2
Publikováno v:
Surface and Coatings Technology. :932-936
The properties of reactive ion beam etching (RIBE) of single crystalline lithium tantalate (LiTaO 3 ) and photoresist are reported, with particular attention given to the dependence on the gas flow, the ion beam current, the accelerating voltage as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::541f5d61c2e1da06e9fed43e93245c57
https://doi.org/10.1016/0257-8972(94)08207-3
https://doi.org/10.1016/0257-8972(94)08207-3
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is the leading next generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be the mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::676f1074eee582b8d39224bc34e01807
https://doi.org/10.1117/12.879467
https://doi.org/10.1117/12.879467
Autor:
R. Yevtukov, Hari Hegde, M. S. Miller, Jinsong Wang, Adrian J. Devasahayam, Ming Mao, Viktor Kanarov, Richard J. Gambino, Alan V. Hayes
Publikováno v:
Journal of Applied Physics. 85:4922-4924
Spin–valve films with the structure Ta/NiFe/FeCo/Cu(18–30 A)/FeCo/FeMn–70 A/Ta were deposited using a Veeco ion beam deposition (IBD) system, model IBD-350. The physical properties of these spin–valve films as a function of primary ion beam e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe48cff608e032c606cc81f0ba56e26
https://doi.org/10.1063/1.369143
https://doi.org/10.1063/1.369143
Publikováno v:
Photomask Technology 2008.
A key requirement for the success of EUV lithography is a high volume supply of defect-free Mo/Si multilayer (ML)- coated mask blanks. The process of fabricating mask blanks is particularly sensitive to particle contamination because decoration by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3730ec548eb04c047ca107a123f262
https://doi.org/10.1117/12.801870
https://doi.org/10.1117/12.801870
Reactive ion beam etching of ferroelectric materials using an RF inductively coupled ion beam source
Publikováno v:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics.
Reactive Ion Beam Etching (RIBE) has been found to be an extremely useful technique for fabricating highly anisotropic ferroelectric device structures, particularly nonvolatile random access (NVRAM) memory devices, which are difficult to etch by othe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c5dcccf62eac77c10af33fb09e515e4
https://doi.org/10.1109/isaf.1996.598141
https://doi.org/10.1109/isaf.1996.598141