Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Alan V. Barnes"'
Autor:
H. Gregg, G. Overturf, D. H. G. Schneider, Alan V. Barnes, I. A. Mowat, J. W. McDonald, A. V. Hamza, Thomas Schenkel, M. W. Newman, T. R. Niedermayr
Publikováno v:
Journal of Energetic Materials. 19:101-118
Highly Charged Ion (HCI) Time-of-Flight (TOF) Secondary Ion Mass Spectrometry (SIMS) has been employed to analyze the changes in the surface composition of TATB caused by low energy electron, ultraviolet, and Gamma ray irradiation. Comparisons are ma
Autor:
Alex V. Hamza, Alan V. Barnes, Ed Magee, Mike Newman, Thomas Schenkel, Joseph W. McDonald, Dieter H. Schneider
Publikováno v:
Review of Scientific Instruments. 71:2077-2081
A highly charged ion based time-of-flight emission microscope has been designed, which improves the surface sensitivity of static SIMS measurements because of the higher ionization probability of highly charged ions. Slow, highly charged ions are pro
Autor:
Z. Hargitai, Y. Yao, Royal G. Albridge, Wolfgang Husinsky, Gerhard Betz, Gunter Lüpke, Alan V. Barnes, Jonathan M. Gilligan, Vernita Gordon, John C. Tully, B. Pratt Ferguson, M. M. Albert, Norman Tolk
Publikováno v:
Physical Review Letters. 81:550-553
An unexpected pronounced enhancement is observed in sputtering yields per atom for ${\mathrm{N}}_{2}^{+}$ compared to ${\mathrm{N}}^{+}$ from a polycrystalline gold target. This effect is seen when the kinetic energy per projectile atom is below 500
Autor:
Gunter Lüpke, J. Sturmann, Norman Tolk, A. Ueda, J.L. Davidson, Jonathan M. Gilligan, Alan V. Barnes, Royal G. Albridge
Publikováno v:
Applied Surface Science. :59-63
We report first studies of photodesorption from diamond films using the Vanderbilt Free-Electron Laser at two infrared wavelengths: 3.5 μ m, corresponding to localized absorption by C–H bonds at grain boundaries, and 5 μ m, corresponding to two-p
Autor:
Thomas Schenkel, Barney Lee Doyle, D. H. Schneider, D. S. Walsh, Alex V. Hamza, Alan V. Barnes
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1384-1387
B–SiO2 films formed by chemical vapor deposition on silicon substrates were analyzed by time-of-flight secondary ion mass spectrometry using slow Xe44+ and Th70+ as primary ions. Boron concentrations of 2×1021 cm−3 determined directly from posit
Autor:
Xue Yang, J. T. McKinley, M. T. Graham, Norman Tolk, Giorgio Margaritondo, Royal G. Albridge, Alan V. Barnes, W. Wang, Jonathan M. Gilligan, J.L. Davidson, A. Ueda, J. Sturmann
Publikováno v:
Scopus-Elsevier
As synchrotron radiation sources have been used for many experiments in the ultraviolet and X-ray regimes, the free-electron laser is an excellent source for a wide array of infrared-photon projects and applications. The free-electron laser delivers
Publikováno v:
Physical Review B. 55:2854-2858
We have observed anomalous temperature dependence in the ion-induced desorption of excited sodium atoms from sodium fluoride crystals. The fluorescence yield of the 3p-3d transition at 8195 {Angstrom}, and the 3p-4d transition at 5688 {Angstrom} incr
Autor:
Royal G. Albridge, Alan V. Barnes, Giorgio Margaritondo, G.A. Mensing, J. T. McKinley, Vernita Gordon, J.L. Davidson, Norman Tolk, J. Sturmann, B.M. Barnes
Publikováno v:
Applied Surface Science. 106:205-210
The free-electron laser (FEL) has become an important tool for producing high-intensity photon beams, especially in the infrared. Synchrotron radiation's primary spectral domains are in the ultraviolet and X-ray region. FEL's are therefore excellent
Publikováno v:
Journal of Non-Crystalline Solids. 203:62-68
A luminescence band at 2.75 eV in silica glass, Corning 7940, excited with 1 keV electron beam was measured as a function of beam current and dose. The initial luminescent intensities at 2.75 eV, taken within 1 s of the beginning of irradiation, were
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 115:415-420
Defects created by 20 keV ion bombardment of NaF and LiF crystals have been investigated by optical absorption and luminescence measurements. The F center band and F-center aggregate bands have been identified in NaF and LiF crystals under argon ion