Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Alan Teran"'
Publikováno v:
Indoor Photovoltaics. :241-271
Publikováno v:
IEEE Transactions on Electron Devices. 63:2820-2825
GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale ( $\approx 1$ mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditi
Autor:
Yoonmyoung Lee, Wootaek Lim, David Blaauw, Jamie Phillips, Joeson Wong, Gyouho Kim, Alan Teran
Publikováno v:
IEEE Transactions on Electron Devices. 62:2170-2175
Indoor photovoltaic energy harvesting is a promising candidate to power millimeter (mm)-scale systems. The theoretical efficiency and electrical performance of photovoltaics under typical indoor lighting conditions are analyzed. Commercial crystallin
Autor:
Antonio Martí, Antonio Luque, Esther López, Alan Teran, I. Artacho, Chihyu Chen, Jamie Phillips, P.G. Linares
Publikováno v:
IEEE Journal of Photovoltaics. 5:874-877
Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current–voltage ( I – V ) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of
Autor:
Jinyoung Hwang, Antonio Martí, Alan Teran, Andrew J. Martin, Joanna Mirecki Millunchick, Elisa Antolin, Jamie Phillips, Antonio Luque, Iñigo Ramiro
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Autor:
Antonio Luque, Chihyu Chen, E. Hernández, Antonio Martí, Justin M. Foley, César Tablero, Esther López, Jinyoung Hwang, Elisa Antolin, I. Artacho, Jamie Phillips, Alan Teran, Iñigo Ramiro
Publikováno v:
IEEE Journal of Photovoltaics, ISSN 2156-3381, 2014, Vol. 4, No. 4
Digital.CSIC. Repositorio Institucional del CSIC
instname
Archivo Digital UPM
Universidad Politécnica de Madrid
Digital.CSIC. Repositorio Institucional del CSIC
instname
Archivo Digital UPM
Universidad Politécnica de Madrid
ZnTe doped with high concentrations of oxygen has been proposed in previous works as an intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demons
Autor:
R. Villa, J.A. Wong, M.L. Lucho, Alan Teran, F.R. Jerí, J.C. Pérez, L. Durán, J. Ramírez, M.A. Castañeda
Publikováno v:
Revista de Neuro-Psiquiatria; Vol 57 No 2 (1994): Revista de Neuro-Psiquiatría; 88-101
Revista de Neuro-Psiquiatria; Vol. 57 Núm. 2 (1994): Revista de Neuro-Psiquiatría; 88-101
Revistas-Universidad Peruana Cayetano Heredia
Universidad Peruana Cayetano Heredia
instacron:UPCH
Revista de Neuro-Psiquiatria; Vol. 57 Núm. 2 (1994): Revista de Neuro-Psiquiatría; 88-101
Revistas-Universidad Peruana Cayetano Heredia
Universidad Peruana Cayetano Heredia
instacron:UPCH
Autor:
Alan Teran, P.G. Linares, Jinyoung Hwang, Iñigo Ramiro, Andrew J. Martin, Jamie Phillips, Elisa Antolin, Antonio Luque, Antonio Martí, Joanna M. Millunchick
Publikováno v:
IEEE Journal of Photovoltaics, ISSN 2156-3381, 2016-12, Vol. PP, No. 99
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs) by means of quantum efficiency (QE) measurements. We are able, for the first time, to measure an absolute QE which clearly reveals the three characteristic ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5e7c262f4a4d34ddf00a9f00e207b50
https://oa.upm.es/44703/
https://oa.upm.es/44703/
Autor:
Matthew T. Dejarld, Vanessa Sih, Marta Luengo-Kovac, Sara Beck, Joanna Mirecki Milunchick, Lifan Yan, Jamie Phillips, Cristina Guillen, Alan Teran, Eunseong Moon
The increasing demand for miniature autonomous sensors requires low cost integration methods, but to date, material limitations have prevented the direct growth of optically active III-V materials on CMOS devices. We report on the deposition of GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0792e625f82fff15bc1702d006c23aa4
https://europepmc.org/articles/PMC5175575/
https://europepmc.org/articles/PMC5175575/
Publikováno v:
Digest of technical papers. IEEE International Solid-State Circuits Conference. 2016