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pro vyhledávání: '"Alan Otero-Carrascal"'
Autor:
Alan Otero-Carrascal, Dora Chaparro-Ortiz, Purushothaman Srinivasan, Oscar Huerta, Edmundo Gutiérrez-Domínguez, Reydezel Torres-Torres
Publikováno v:
Micromachines, Vol 15, Iss 2, p 252 (2024)
Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyze
Externí odkaz:
https://doaj.org/article/a5d4baa581cf400899f75e7c6b4c8d95
