Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Alan Harvey"'
Autor:
Kalani Moore, Michele Conroy, Eoghan N. O’Connell, Charlotte Cochard, Jennifer Mackel, Alan Harvey, Thomas E. Hooper, Andrew J. Bell, J. Marty Gregg, Ursel Bangert
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-7 (2020)
Domain walls are the basic building blocks of a ferroic system and determine the overall ferroic properties. Here, the authors use aberration corrected scanning transmission electron microscopy to observe the formation of charged needle point domain
Externí odkaz:
https://doaj.org/article/1d478a23f29b40c5b80d6a1243e5ed2e
Autor:
Alan Harvey, Sarah Zukoff
Publikováno v:
PLoS ONE, Vol 6, Iss 3, p e17746 (2011)
Rapid movement is challenging for elongate, soft-bodied animals with short or no legs. Leaping is known for only a few animals with this "worm-like" morphology. Wheel locomotion, in which the animal's entire body rolls forward along a central axis, h
Externí odkaz:
https://doaj.org/article/12edb824dd424f6c973c88871023ce74
Autor:
Conor J. McCluskey, Matthew G. Colbear, James P. V. McConville, Shane J. McCartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymond G. P. McQuaid, J. Marty Gregg
Publikováno v:
McCluskey, C J, Colbear, M G, McConville, J P V, McCartan, S J, Maguire, J R, Conroy, M, Moore, K, Harvey, A, Trier, F, Bangert, U, Gruverman, A, Bibes, M, Kumar, A, McQuaid, R G P & Gregg, J M 2022, ' Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature ', Advanced Materials, vol. 34, no. 32, 2204298 . https://doi.org/10.1002/adma.202204298
McCluskey, C J, Colbear, M G, McConville, J P V, McCartan, S J, Maguire, J R, Conroy, M, Moore, K, Harvey, A, Trier, F, Bangert, U, Gruverman, A, Bibes, M, Kumar, A, McQuaid, R G P & Gregg, M 2022, ' Ultrahigh carrier mobilities in ferroelectric domain wall corbino cones at room temperature ', Advanced Materials, vol. 34, no. 32, 2204298 . https://doi.org/10.1002/adma.202204298
McCluskey, C J, Colbear, M G, McConville, J P V, McCartan, S J, Maguire, J R, Conroy, M, Moore, K, Harvey, A, Trier, F, Bangert, U, Gruverman, A, Bibes, M, Kumar, A, McQuaid, R G P & Gregg, M 2022, ' Ultrahigh carrier mobilities in ferroelectric domain wall corbino cones at room temperature ', Advanced Materials, vol. 34, no. 32, 2204298 . https://doi.org/10.1002/adma.202204298
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::452b02ae4ac42b84f6de8d8639853b59
Publikováno v:
Microscopy and Microanalysis. 28:1728-1729
Autor:
Peter Monteith, Stephen Marritt, Alan Harvey, Michael Hicks, Matthew Hefferan, John S. Lee, Charlotte Tomlinson
Publikováno v:
Archives: The Journal of the British Records Association. 54:71-85
Autor:
Eileen Courtney, Kalani Moore, Joseph G. M. Guy, R. G. P. McQuaid, Charlotte Cochard, Ursel Bangert, Pablo Aguado-Puente, Michele Conroy, Elisabeth Soergel, Roger W. Whatmore, Amit Kumar, J. Marty Gregg, Alan Harvey
Publikováno v:
Guy, J, Cochard, C, Aguado-Puente, P, Soergel, E, Whatmore, R, Conroy, M, Moore, K, Courtney, E, Harvey, A, Bangert, U, Kumar, A, McQuaid, R & Gregg, M 2021, ' Anomalous Motion of Charged Domain Walls and Associated Negative Capacitance in Copper-Chlorine Boracite ', Advanced Materials . https://doi.org/10.1002/adma.202008068
During switching, the microstructure of a ferroelectric normally adapts to align internal dipoles with externally applied electric fields. Dipolar regions (domains), that are favourably oriented, grow at the expense of those in unfavourable orientati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccf9a938d36171b472e7d4823e604c8d
https://pure.qub.ac.uk/en/publications/e4918ba3-3aca-4d49-973f-954bdba0c122
https://pure.qub.ac.uk/en/publications/e4918ba3-3aca-4d49-973f-954bdba0c122
Autor:
Enrico Napolitani, Gioele Mirabelli, Emmanuele Galluccio, Ray Duffy, Michele Conroy, Alan Harvey
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three different metals (Ni, Pt, and Ti) were characterized using a wide laser energy density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a54209a5bea2fec0a9401698b2d5f2df
http://hdl.handle.net/11577/3349923
http://hdl.handle.net/11577/3349923
Autor:
Alan Harvey, J. Marty Gregg, Kalani Moore, Andrew J. Bell, Charlotte Cochard, Thomas E. Hooper, Michele Conroy, Eoghan O'Connell, Jennifer Mackel, Ursel Bangert
Publikováno v:
Moore, K, Conroy, M, O'Connell, E N, Cochard, C, Mackel, J, Harvey, A, Hooper, T E, Bell, A J, Gregg, J M & Bangert, U 2020, ' Highly Charged 180 degree Head-to-Head Domain Walls in Lead Titanate ', Communications Physics, vol. 3, 231 . https://doi.org/10.1038/s42005-020-00488-x
Communications Physics, Vol 3, Iss 1, Pp 1-7 (2020)
Communications Physics, Vol 3, Iss 1, Pp 1-7 (2020)
Charged domain walls (DWs) in ferroelectric materials are an area of intense research. Microscale strain has been identified as a method of inducing arrays of twin walls to meet at right angles, forming needlepoint domains which exhibit novel materia
Autor:
Charlotte Cochard, Michele Conroy, Kalani Moore, Long Qing Chen, J. Marty Gregg, Ursel Bangert, Yueze Tan, Haidong Lu, James P. V. McConville, Alexei Gruverman, Bo Wang, Alan Harvey
Publikováno v:
Advanced Functional Materials
McConville, J P V, Lu, H, Wang, B, Tan, Y, Cochard, C, Conroy, M, Harvey, A, Bangert, U, Chen, L-Q, Gruverman, A & Gregg, J M 2020, ' Ferroelectric Domain Wall Memristor ', Advanced Functional Materials, vol. 122, 2000109 . https://doi.org/10.1002/adfm.202000109
McConville, J P V, Lu, H, Wang, B, Tan, Y, Cochard, C, Conroy, M, Harvey, A, Bangert, U, Chen, L-Q, Gruverman, A & Gregg, J M 2020, ' Ferroelectric Domain Wall Memristor ', Advanced Functional Materials, vol. 122, 2000109 . https://doi.org/10.1002/adfm.202000109
A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectr