Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alan Gorenz"'
Autor:
R. D. Briggs, Charles T. Sullivan, T. R. Fortune, Andrew J. Scruggs, Gary A. Patrizi, John F. Klem, Jascinda Clevenger, Alan Gorenz, Albert G. Baca
Publikováno v:
ECS Transactions. 50:273-282
Step-stress experiments on high-voltage Npn InGaP/GaAs HBTs are shown to reveal a number of degradation mechanisms, singly or in combinations: defect buildup in the emitter depletion region, defect buildup in the neutral base region, possible degrada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460c203d866b1409495e0587e2ac9592
https://doi.org/10.1149/05006.0273ecst
https://doi.org/10.1149/05006.0273ecst
(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs
Autor:
Alan Gorenz, Jascinda Clevenger, R. D. Briggs, T. R. Fortune, Albert G. Baca, John Frederick Klem, Gary A. Patrizi, Joshua Ali Kotobi
Publikováno v:
ECS Meeting Abstracts. :1503-1503
Since InGaP/GaAs heterojunction bipolar transistors (HBTs) are utilized in a wide variety of RF and other applications, a great deal has been learned about their reliability. Nevertheless, this knowledge is limited by the fact that most reliability s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1797a9fe5fb7bd150fb93150a3d2762
https://doi.org/10.1149/ma2014-01/41/1503
https://doi.org/10.1149/ma2014-01/41/1503
Autor:
Albert G. Baca, Andrew Scruggs, Alan Gorenz, Torben Fortune, John Klem, Ronald Briggs, Jascinda Clevenger, Gary Patrizi, Charles Sullivan
Publikováno v:
ECS Meeting Abstracts. :3018-3018
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416ee4b8cbeb3648bb9750bf260f54bf
https://doi.org/10.1149/ma2012-02/41/3018
https://doi.org/10.1149/ma2012-02/41/3018