Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Alan G. Jacobs"'
Autor:
James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high fr
Externí odkaz:
https://doaj.org/article/b91217baedd446a78ec363aca62a9849
Autor:
James C. Gallagher, Michael A. Mastro, Mona A. Ebrish, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs res
Externí odkaz:
https://doaj.org/article/1ac3926697a74e94a44d8726bab50e74
Autor:
James C. Gallagher, Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy a
Externí odkaz:
https://doaj.org/article/0ec73626ce3f472a8ac3201e0452ada9
Autor:
Alan G. Jacobs, Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Crystals, Vol 13, Iss 5, p 736 (2023)
Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization. Herein, we report highly effective silicon ion implant activation in GaN via S
Externí odkaz:
https://doaj.org/article/2f1386850e6b4d1c912b5af5261f2d76
Autor:
Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Crystals, Vol 12, Iss 5, p 623 (2022)
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the elec
Externí odkaz:
https://doaj.org/article/6a128e555ceb4faa996a20fa424064b2
Autor:
Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah Masten, James Spencer Lundh, Joseph Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl D. Hobart, Marko J. Tadjer, Stephen J Pearton
Publikováno v:
ECS Transactions. 111:85-96
NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 µm exhibited maximum reverse breakdown voltages >7kV, showing the advantage of increasing the bandgap using the β-(Al x Ga1-x )2O3 alloy. This Si-doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31fd77bea88c94b26774915bee12ac1
https://doi.org/10.1149/11102.0085ecst
https://doi.org/10.1149/11102.0085ecst
Autor:
Alan G. Jacobs, Joseph A. Spencer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson, Boris N. Feigelson
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dbd95a8c619a60d4e37454e1832d67
https://doi.org/10.1002/pssa.202200848
https://doi.org/10.1002/pssa.202200848
Autor:
Marko J. Tadjer, Patrick Waltereit, Lutz Kirste, Stefan Müller, James Spencer Lundh, Alan G. Jacobs, Andrew D. Koehler, Pavel Komarov, Peter Raad, John Gaskins, Patrick Hopkins, Vlad Odnoblyudov, Cem Basceri, Travis J. Anderson, Karl D. Hobart
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f5c525c78732982462f262112ccfbd
https://doi.org/10.1002/pssa.202200828
https://doi.org/10.1002/pssa.202200828
Autor:
James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727ffbfb9dbd6987667e202beffafe1a
https://doi.org/10.1109/drc55272.2022.9855809
https://doi.org/10.1109/drc55272.2022.9855809
Autor:
Michael A. Mastro, Yekan Wang, James C. Gallagher, Michael E. Liao, Mona A. Ebrish, Boris N. Feigelson, Karl D. Hobart, Mark S. Goorsky, Jennifer K. Hite, Alan G. Jacobs, Travis J. Anderson
Publikováno v:
Journal of Electronic Materials. 50:4642-4649
In light of the importance of selective area doping in GaN to enable planar process technology, and to avoid the complications from the etch/regrowth process, ion implantation is the recognizable alternative. Annealing to activate dopant species and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f851a284c0b1bf596693b5f7ae2f912b
https://doi.org/10.1007/s11664-021-08984-8
https://doi.org/10.1007/s11664-021-08984-8