Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Alan E. Kibbler"'
Autor:
William E. McMahon, Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Robert C. Reedy, Jerry M. Olson, Adele C. Tamboli, Paul Stradins
Publikováno v:
Journal of Crystal Growth. 452:235-239
Direct growth of GaP on Si enables the integration of III–V and Si optoelectronic devices for a wide variety of applications, and has therefore been the subject of much research for many decades. Most of this effort has been directed toward overcom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a2a612715958999ac5ec1da011ff97
https://doi.org/10.1016/j.jcrysgro.2016.05.014
https://doi.org/10.1016/j.jcrysgro.2016.05.014
Autor:
Chieh-Ting Lin, William E. McMahon, James S. Ward, John F. Geisz, Mark W. Wanlass, Jeffrey J. Carapella, Waldo Olavarria, Emmett E. Perl, Michelle Young, Myles A. Steiner, Ryan M. France, Alan E. Kibbler, Anna Duda, Tom E. Moriarty, Daniel J. Friedman, John E. Bowers
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:593-599
A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a “pillar-array” metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice-matched twotermin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d00510b980b7f30a28287141abee13
https://doi.org/10.1002/pip.2468
https://doi.org/10.1002/pip.2468
Autor:
Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Jerry M. Olson, William E. McMahon
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb169bb3f1713792d8ca18d930147eb
https://doi.org/10.1109/pvsc.2015.7356383
https://doi.org/10.1109/pvsc.2015.7356383
Autor:
Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Paul Stradins, William E. McMahon
Publikováno v:
Applied Physics Letters. 107:082109
Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9faf41c94de5522e6c8ce021b054859
https://doi.org/10.1063/1.4929714
https://doi.org/10.1063/1.4929714