Zobrazeno 1 - 10
of 192
pro vyhledávání: '"Alan Doolittle"'
Autor:
Bill Zivasatienraj, W. Alan Doolittle
Publikováno v:
Frontiers in Neuroscience, Vol 17 (2023)
While there is an abundance of research on neural networks that are “inspired” by the brain, few mimic the critical temporal compute features that allow the brain to efficiently perform complex computations. Even fewer methods emulate the heterog
Externí odkaz:
https://doaj.org/article/a2e3bc2649cb421789164991bb0e908b
Publikováno v:
IEEE Transactions on Electron Devices. 70:776-781
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21663478d73822952a2bdd2514afacdf
https://doi.org/10.1109/ted.2022.3227498
https://doi.org/10.1109/ted.2022.3227498
Autor:
Darshan G. Pahinkar, Pradip Basnet, Matthew P. West, Bill Zivasatienraj, Alex Weidenbach, W. Alan Doolittle, Eric Vogel, Samuel Graham
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035127-035127-12 (2020)
Neuromorphic computation using nanoscale adaptive oxide devices or memristors is a very promising alternative to the conventional digital computing framework. Oxides of transition metals, such as hafnium (HfOx), have been proven to be excellent candi
Externí odkaz:
https://doaj.org/article/3269bbbde5474a4fa0a028957ea0a701
Autor:
Pao-Chuan Shih, Girish Rughoobur, Zachary Engel, Habib Ahmad, William Alan Doolittle, Akintunde I. Akinwande, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 43:1351-1354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba4686180e1cb90f37ef49afcda2dc
https://doi.org/10.1109/led.2022.3184996
https://doi.org/10.1109/led.2022.3184996
Publikováno v:
Crystals, Vol 11, Iss 4, p 397 (2021)
High-quality epitaxial growth of thin film lithium niobate (LiNbO3) is highly desirable for optical and acoustic device applications. Despite decades of research, current state-of-the-art epitaxial techniques are limited by either the material qualit
Externí odkaz:
https://doaj.org/article/a068d5a9e7864e54bd8cc9a343458d3d
Publikováno v:
IEEE Transactions on Electron Devices. 69:2566-2572
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5fcb290d731c095a3157d89a40d3f9
https://doi.org/10.1109/ted.2022.3156951
https://doi.org/10.1109/ted.2022.3156951
Autor:
Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.
Publikováno v:
Journal of Applied Physics; 6/7/2020, Vol. 127 Issue 21, p1-8, 8p, 2 Charts, 7 Graphs
Autor:
Zivasatienraj, Bill, Brooks Tellekamp, M., Weidenbach, Alex S., Ghosh, Aheli, McCrone, Timothy M., Alan Doolittle, W.
Publikováno v:
Journal of Applied Physics; 2/28/2020, Vol. 127 Issue 8, p1-8, 8p, 6 Graphs
Autor:
Bill Zivasatienraj, W. Alan Doolittle
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07afa9a0699408e941d4289b3d473e6
https://doi.org/10.1109/drc55272.2022.9855650
https://doi.org/10.1109/drc55272.2022.9855650
Publikováno v:
Journal of Applied Physics. 131
Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a semiconductor via impurity doping. Some of the historic challenges for successfully doping AlN include a reconfigurable defect formation known as a DX center an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f783a9649395b8b3fa6d495cf6af9f5
https://doi.org/10.1063/5.0086314
https://doi.org/10.1063/5.0086314