Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Alan Buchholz"'
Autor:
Jeff A. Babcock, Alan Buchholz, Robert Malone, Mattias Dahlstrom, Marco Corsi, Alexei Sadovnikov, Hiroshi Yasuda, Joel M. Halbert, Jonggook Kim, Greg Cestra
Publikováno v:
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fd88d32864524f0ead08fa58a53fa5
https://doi.org/10.1109/bctm.2016.7738946
https://doi.org/10.1109/bctm.2016.7738946
Autor:
Alan Buchholz, T. Krakowski, Greg Cestra, Jeff A. Babcock, Sachin Seth, Peng Cheng, John D. Cressler
Publikováno v:
IEEE Transactions on Electron Devices. 58:2573-2581
We have examined the reliability risks of complementary SiGe HBTs on thick-film silicon on insulator (SOI). DC stress techniques, such as reverse emitter-base (EB) stress, mixed-mode stress, and flyback measurements, were used to characterize the saf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9393ab1390b8686d0e08aa267f1bdee
https://doi.org/10.1109/ted.2011.2157924
https://doi.org/10.1109/ted.2011.2157924
Publikováno v:
ISCAS
This paper demonstrates a method to achieve low input impedance and a non-constant gain-bandwidth product using SiGe NPN and PNP devices in order to attain a large bandwidth and gain in transimpedance amplifiers (TIA) for optical communication. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::601478fe2b37295682d3eecff54846b3
https://doi.org/10.1109/iscas.2013.6571913
https://doi.org/10.1109/iscas.2013.6571913
Autor:
Alan Buchholz, John D. Cressler, T. Krakowski, Jin Tang, Greg Cestra, Jeff A. Babcock, Sachin Seth
Publikováno v:
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
This paper presents the characterization of intermodulation distortion in pnp SiGe HBTs on SOI. For the first time, measured results of pnp SiGe HBTs are compared against Spectre-based simulations using both HICUM and VBIC compact models, after the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2af555a7c8c7cd309a94a31f636a9cb
https://doi.org/10.1109/sirf.2012.6160117
https://doi.org/10.1109/sirf.2012.6160117
Autor:
Jon Tao, Don Getchell, Peyman Hojabri, Akshey Sehgal, Wipawan Yindeepol, Andre P. Labonte, Yaojian Leng, Alan Buchholz, Christopher C. Joyce, Saurabh Desai, Stefaan Decoutere, Robert A. Malone, Natasha Lavrovskaya, T. Krakowski, Wibo van Noort, Paul Allard, Jamal Ramdani, Craig Printy, Heather McCulloh, Jeff A. Babcock, Greg Cestra, Scott Ruby, Patrick Mccarthy
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·V A =17,000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827cb673e40050844ff7db2f363d95fc
https://doi.org/10.1109/bipol.2010.5667971
https://doi.org/10.1109/bipol.2010.5667971
Autor:
Richie Mills, John D. Cressler, S. Horst, Greg Cestra, Sachin Seth, Peng Cheng, Alan Buchholz, T. Krakowski, S.D. Phillips, Jeff A. Babcock
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Low-frequency noise in complementary SiGe HBTs on SOI is investigated. S ib is extracted using a custom measurement setup, and the corresponding K factors are compared across multiple SiGe technology platforms for better understanding of SiGe evoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3a9d2ba60989a687d857c1edf2482e0
https://doi.org/10.1109/bipol.2010.5667937
https://doi.org/10.1109/bipol.2010.5667937
Autor:
Alan Buchholz, John D. Cressler, Sachin Seth, Peng Cheng, Jeff A. Babcock, Tushar Thrivikraman
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
For the first time, a large-signal RF stress study of complementary (npn + pnp) SiGe HBTs on thick-film SOI is performed, and analyses based on device physics are presented, shedding light on the observed failure mechanisms of these C-SiGe HBTs at ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009b699e5c56d5ee1f13287c44436996
https://doi.org/10.1109/bipol.2010.5667911
https://doi.org/10.1109/bipol.2010.5667911
Autor:
Sachin Seth, Alan Buchholz, Jeff A. Babcock, Tushar Thrivikraman, Marco Bellini, John D. Cressler, Tianbing Chen, Peng Cheng, C.M. Grens, Jonggook Kim
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics, as well as RF gain and linearity measurements. SOI SiGe HBTs are found to suffer more from s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12a4841b7f73064a601a13776152cd6
https://doi.org/10.1109/bipol.2009.5314144
https://doi.org/10.1109/bipol.2009.5314144
Autor:
Alan Buchholz, C.M. Grens, Yun Liu, Sachin Seth, Peng Cheng, John D. Cressler, Jonggook Kim, Jeff A. Babcock
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF linearity characteristics of complementary (npn + pnp) SiGe HBTs are investigated with respect to bias and frequency dependence, for the first time. The differences in distortion performance between npn and pnp SiGe HBTs are examined. Overall,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e42c8ed526613214d2e1beb1a5b5a5
https://doi.org/10.1109/bipol.2009.5314146
https://doi.org/10.1109/bipol.2009.5314146
Conference
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