Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Alan B. Botula"'
Autor:
John J. Ellis-Monaghan, James A. Slinkman, Michel J. Abou-Khalil, Steven M. Shank, Richard A. Phelps, Zhong-Xiang He, Jeff Gross, Jeffrey P. Gambino, Mark D. Jaffe, Randy L. Wolf, Alan B. Botula, Alvin J. Joseph
Publikováno v:
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c17dda753c1a9ba7f5c8b7e7470b2a2
https://doi.org/10.1109/sirf.2015.7119865
https://doi.org/10.1109/sirf.2015.7119865
Autor:
Mark D. Jaffe, Alan B. Botula, Randy L. Wolf, Steven Moss, James A. Slinkman, Michel J. Abou-Khalil, John J. Ellis-Monaghan, Alvin J. Joseph, Rick Phelps
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
In this study, we define and investigate the maximum power handling capability (Pmax) in an SOI RF shunt branch switch. One of the critical factor in the Pmax is the non-uniform voltage division across an OFF shunt branch. In this study we provide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8c0ae730b765fda8e05bebec647385
https://doi.org/10.1109/rfic.2013.6569611
https://doi.org/10.1109/rfic.2013.6569611
Autor:
Alvin J. Joseph, Theodore J. Letavic, James A. Slinkman, Michel J. Abou-Khalil, Mark D. Jaffe, Alan B. Botula
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We present a new device design for 20V application in thin body SOI technology. High breakdown voltage is achieved by forming RX-bound field plates which deplete the drift region of an LDMOS structure using only lateral electric field coupling. A bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aebdad9e21024dbaf5672e4ecc9e8df
https://doi.org/10.1109/ispsd.2013.6694464
https://doi.org/10.1109/ispsd.2013.6694464
Autor:
Dawn Wang, David L. Harame, Alan B. Botula, Peter Rabbeni, James S. Dunn, Alvin J. Joseph, Randy L. Wolf, Myra Boenke
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch referenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1130a7a8fa9aa3d6e5da68b307a3a4a2
https://doi.org/10.1109/icsict.2010.5667307
https://doi.org/10.1109/icsict.2010.5667307
Publikováno v:
2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
This paper describes a single pole, single throw (SPST) 180nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236f22d0fa5e4758f393aae31d76c0a7
https://doi.org/10.1109/smic.2009.4770520
https://doi.org/10.1109/smic.2009.4770520
Autor:
Bernard S. Meyerson, Natalie B. Feilchenfeld, E. Eld, R. Johnson, David L. Harame, Alan B. Botula, J. Joseph, J. Dunn, Nicholas Theodore Schmidt, J. Malinowski, Steven H. Voldman, P. Juliano, Ciaran J. Brennan, Louis D. Lanzerotti, V. Gross, D. Herman
Publikováno v:
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).
High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ea132ddf8f7462c32eaf3abeaac5b4
https://doi.org/10.1109/bipol.2000.886208
https://doi.org/10.1109/bipol.2000.886208