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Publikováno v:
Japanese Journal of Applied Physics. 29:1908
The influence of As/Ga flux ratio on the transport and optical properties of high purity Si-doped MBE GaAs has been investigated using two arsenic cells alternately or simultaneously. When the As produced from one cell increases by one order of magni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db43ad29e6ac060d226df1351d27bb0
https://doi.org/10.1143/jjap.29.1908
https://doi.org/10.1143/jjap.29.1908
