Integration Aspects of the Implementation of Through Silicon Vias (TSV) for CMOS Image Sensors

Autor: Dorleta Cortaberria Sanz, Gilles Metellus, Francois Guyader, Dave Thomas, Yiping Song, Keith Buchanan, Alain Inard, Tony Wilby, Jean Michailos, N. Hotellier

Publikováno v: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000539-000556

One of the first device types to benefit from TSV implementation is the CMOS image sensor, an image capture device designed to combine high image quality within a compact form-factor that can be mass produced at low cost. End markets include mobile p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d543386ea055fdb7c416f626d8876f09
https://doi.org/10.4071/2010dpc-ta14

Trench process with HBr chemistry in ripe

Autor: Jean-Marc Francou, Alain Inard, Daniel Henry

Publikováno v: Microelectronic Engineering. 13:425-428

The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb5c0ef61333947a16cfe91a57da2276
https://doi.org/10.1016/0167-9317(91)90125-w

Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

Autor: Frédéric Barbier, F. Roy, N. Hotellier, T. Girault, O. LeBorgne, J. P. Reynard, M. Cohen, Didier Herault, A. Gandolfi, Yvon Cazaux, Jérôme Vaillant, Alain Inard, Christophe Cowache, C. Augier, C. Zinck, Yannick Sanchez, E. Mazaleyrat, T. Jagueneau, Jean Michailos, E. Bruno

Publikováno v: 2006 International Electron Devices Meeting.

An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise. A full 3MP demonstrator with 1.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::60329343f92f45870625c1d264e4d237
https://doi.org/10.1109/iedm.2006.346976

Concept and processing of buried photomasks

Autor: P. Moschini, F. Lalanne, Gilles R. Amblard, Jean-Pierre Panabiere, Alain Inard, Jean-Marc Francou, L. Guérin, André Weill

Publikováno v: Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (8), pp.859-865. ⟨10.1051/rphysap:01990002508085900⟩

A new method for fabricating photomasks is proposed. The mask is prepared by burying the absorbent patterns inside the transparent photoplate instead of depositing them on the surface of the photoplate. After imaging and etching trenches into the gla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12481709339b2dae8f659185770c30f6
https://hal.archives-ouvertes.fr/jpa-00246247

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