Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Alain G. Deleporte"'
Autor:
Alain G. Deleporte, Pascal Fabre, Ganesh Sundaram, D. Ristoiu, Paul C. Knutrud, Philippe Spinelli, Rolf Arendt, Marc Poulingue, Vincent Vachellerie, Pierre-Olivier Sassoulas
Publikováno v:
SPIE Proceedings.
As geometrical dimensions of semiconductor devices decrease, the need to introduce Cu processes into the fabrication cycle becomes increasingly important as a means of maintaining line resistances and circuit time constants. However, the success of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca624d8d56f38d51039d216c9bf0bbc
https://doi.org/10.1117/12.473461
https://doi.org/10.1117/12.473461
Autor:
Rolf Arendt, Vincent Vachellerie, Yannick Bedin, D. Ristoiu, Ganesh Sundaram, Paul C. Knutrud, Marc Poulingue, Alain G. Deleporte
Publikováno v:
SPIE Proceedings.
As the number of varied devices produced by a fab increases, coupled with an increased complexity in those devices which call for an ever increasing number of process layers, in-line process control via metrology can become an impossible task, unless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e81ab6d21ef08a7804e8312ce72a94
https://doi.org/10.1117/12.473492
https://doi.org/10.1117/12.473492
Autor:
George W. Banke, John A. Allgair, Michael T. Postek, Alain G. Deleporte, Jerry E. Schlesinger, Charles N. Archie, Arnold W. Yanof, András E. Vladár
Publikováno v:
SPIE Proceedings.
The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929b28398ca6a512e9ce87f789571b00
https://doi.org/10.1117/12.395750
https://doi.org/10.1117/12.395750
Autor:
Xinhui Niu, Junwei Bao, Alain G. Deleporte, Costas J. Spanos, Nickhil Jakatdar, Sanjay K. Yedur
Publikováno v:
SPIE Proceedings.
Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81613148977450a03aec49b9bac9ed5d
https://doi.org/10.1117/12.386464
https://doi.org/10.1117/12.386464
Autor:
Alain G. Deleporte, John A. Allgair, Charles N. Archie, G. W. Banke, Jr., Michael T. Postek, Jr., Jerry E. Schlesinger, Andras E. Vladar, Arnold W. Yanof
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3a4ff114ebf2ab15373f39928df082
https://doi.org/10.1117/12.386524
https://doi.org/10.1117/12.386524
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