Zobrazeno 1 - 10 of 161 pro vyhledávání: '"Alain E. Kaloyeros"'
1
Akademický článek
Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
Autor: Alain E. Kaloyeros, Jonathan Goff, Barry Arkles
Publikováno v: Electronic Materials, Vol 3, Iss 1, Pp 27-40 (2022)
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window rangi
Externí odkaz: https://doaj.org/article/f59107ae9a7e45609938548776be6dcb
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2
Akademický článek
Controlling Interfacial Adhesion of Self-Assembled Polypeptide Fibrils for Novel Nanoelectromechanical System (NEMS) Applications
Autor: Christopher Kossow, Eric T. Eisenbraun, Alain E. Kaloyeros, Robert E. Geer, Narender Rana
Publikováno v: Micromachines, Vol 2, Iss 1, Pp 1-16 (2011)
The relative adhesion of two genetically engineered polypeptides termed as H6-(YEHK)x21-H6 and C6-(YEHK)X21-H6 has been investigated following growth and self-assembly on highly oriented pyrolytic graphite (HOPG), SiO2, Ni, and Au substrates to study
Externí odkaz: https://doaj.org/article/e28c33d7dd24418397c353414c02bb9d
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3
Near-Room-Temperature Soft Plasma Pulsed Deposition of SiCxNy from 1,3,5-tri(isopropyl)cyclotrisilazane
Autor: Barry C. Arkles, Jonathan D. Goff, Alain E. Kaloyeros, Chad Brick
Publikováno v: ECS Transactions. 98:121-135
Results are presented from an exploratory study of near-room-temperature pulsed deposition of SiCxNy thin films using 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and soft remote ammonia (NH3) plasma co-reactants. The process involved four
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::72762d299556d03c3e913e6c5c51bc96
https://doi.org/10.1149/09803.0121ecst
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4
Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon
Autor: Alain E. Kaloyeros, Barry C. Arkles, Fernando Jove, Jonathan D. Goff, Youlin Pan
Publikováno v: Inorganic Chemistry. 58:3050-3057
A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. Th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0128529b03b938c9c8cfb05a0b4401d9
https://doi.org/10.1021/acs.inorgchem.8b02761
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6
Simplified CVD route to near-zero thickness silicon nitride films
Autor: Barry Arkles, Chad Brick, Jonathan Goff, Alain E. Kaloyeros
Publikováno v: Journal of Vacuum Science & Technology B. 40:040601
Silicon nitride (SiNx, x ∼ 1) thin films were deposited by chemical vapor deposition on silicon oxide (SiO2) substrates by combining controlled pulses of the precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) with a continuous ammoni
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae3da011d922d168ed8f69f6d074dc1
https://doi.org/10.1116/6.0001820
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8
Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications
Autor: Alain E. Kaloyeros, Jonathan D. Goff, Barry C. Arkles, Fernando Jove
Publikováno v: ECS Journal of Solid State Science and Technology. 6:P691-P714
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1fe51868f4bc4910c0c8e59a56be1606
https://doi.org/10.1149/2.0011710jss
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9
Emerging Molecular and Atomic Level Techniques for Nanoscale Applications
Autor: Barry C. Arkles, Alain E. Kaloyeros, Jonathan D. Goff
The need for tighter control over film uniformity, conformality, and properties at decreasing thicknesses was met by a gradual evolution from physical vapor deposition (PVD), to chemical vapor deposition (CVD), and eventually atomic layer deposition
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397bbca96f97d7daee47d84853911d5b
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10
The low-temperature remote-plasma-activated pulsed chemical vapor deposition route to SiNx from 1,3,5-tri(isopropyl)cyclotrisilazane
Autor: Chad Brick, Jonathan D. Goff, Alain E. Kaloyeros, Barry C. Arkles
Publikováno v: Thin Solid Films. 711:138299
High-quality silicon nitride (SiNx) thin films were grown by remote-plasma-activated pulsed chemical vapor deposition (P-CVD) from the source precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and remote ammonia (NH3) plasma on silicon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::231e358e7f177ad4371f2f6177be4a0a
https://doi.org/10.1016/j.tsf.2020.138299
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