Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Alain Deneuville"'
Autor:
C. Saguy, C. Cytermann, J. Chevallier, François Jomard, B. Philosoph, Dominique Ballutaud, Rafi Kalish, T. Kociniewski, C. Baron, Alain Deneuville
Publikováno v:
Diamond and Related Materials. 16:1459-1462
The p-to-n-type conversion of particular B-doped homoepitaxially grown diamond layers upon deuterium plasma treatment was discovered three years ago. However, many questions regarding the reproducibility of the effect for samples of different origins
Publikováno v:
Diamond and Related Materials. 16:915-920
From the high ionization energy Ei = 0.368 eV and high solid solubility ≥ 1.4 × 1022 cm− 3 of boron in diamond, metallic conductivity is expected on the boron impurity band within the band gap (Mott model). On the contrary, the numerical models
Publikováno v:
physica status solidi (a). 203:3147-3151
As-grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6x10 16 to 1.5 x 102' cm -3 have been analysed using X-ray photoelectron spectroscopy (XPS). Their C Is core levels contain a dominant component around 284.17 ± 0.2 eV a
Autor:
Etienne Bustarret, Dominique Tromson, Dominique Ballutaud, Alain Deneuville, S. Ghodbane, Philippe Bergonzo
Publikováno v:
physica status solidi (a). 203:2397-2402
About 20 μm thick films were deposited in the same run by MPCVD at 900 °C on Si substrates and then hydrogenated in situ during 30 min with a hydrogen plasma at the same temperature. Their surfaces were kept as prepared or more or less strongly oxi
Autor:
Alain Deneuville, S. Ghodbane
Publikováno v:
Diamond and Related Materials. 15:589-592
A set of MPCVD films was prepared from 0.5% CH 4 /H 2 and B 2 H 6 with B/C in the gas phase from 0 to 8000 ppm. When the excitation wavelength of their Raman spectra is switched from 632.8 to 325 nm: The Fano induced dip switches from high to low wav
Publikováno v:
Diamond and Related Materials. 15:597-601
Homoepitaxial films containing from 2 × 10 16 to 1.75 × 10 21 B−cm − 3 are deposited by Microwave Plasma Chemical Vapor Deposition on Ib substrates. From their full continuity for all [B] with those found for the lower [B], the high energy stru
Publikováno v:
Diamond and Related Materials. 15:614-617
A general view of the key issues which have to be surmounted for building elementary devices such as Schottky diodes on homoepitaxial p-type diamond layers is presented. The growth process of double homoepitaxial layers, comprising a stack of both hi
Publikováno v:
physica status solidi (a). 203:544-550
Heavily boron doped 1.8 to 2.4 µm thick homoepitaxial diamond films with 1.5 × 1021 cm–3 ≤ [B] ≤ 1.75 × 1021 cm–3 have been deposited directly on their (100) Ib substrates at 830 °C. Their cathodoluminescence spectra probe the controlled
Publikováno v:
physica status solidi (c). 2:1336-1341
Diamond is a very large bandgap material arising high expectations either for optoelectronic applications or for active semiconducting layers in specific electronic devices to be used under extreme conditions of pressure, temperature, wear or radiati
Autor:
François Jomard, C. Saguy, Rafi Kalish, J. Chevallier, Z. Teukam, James E. Butler, C. Baron, C. Cytermann, T. Kociniewski, Dominique Ballutaud, Alain Deneuville
Publikováno v:
Journal of Applied Physics. 96:7060-7065
The lack of a shallow donor in diamond with reasonable room temperature conductivity has been a major obstacle, until now, for the realization of many diamond based electronic devices. Most recently it has been shown that exposure of p-type (B doped)