A Sub-35 pW Axon-Hillock artificial neuron circuit

Autor: Alain Cappy, Francois Danneville, Christophe Loyez, E. Mercier, Ilias Sourikopoulos, Kevin Carpentier

Publikováno v: Solid-State Electronics
Solid-State Electronics, 2019, 153, pp.88-92. ⟨10.1016/j.sse.2019.01.002⟩
Solid-State Electronics, Elsevier, 2019, 153, pp.88-92. ⟨10.1016/j.sse.2019.01.002⟩

International audience; Artificial Intelligence (AI) applications are developing at a high rate, facing soon a tremendous energy challenge. In this context, the original Axon-Hillock (AH) Artificial Neuron (AN) has been optimized to achieve ultra-low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4881dde6448fe5ad2b3acb9df6a53f7b
https://hal.science/hal-03330291/document

Stochastic model for action potential simulation including ion shot noise

Autor: Alain Cappy, Tomas Gonzalez, Fabio Galán-Prado, Virginie Hoel, Beatriz G. Vasallo, Sara Hedayat, Javier Mateos

Publikováno v: Journal of Computational Electronics
Journal of Computational Electronics, Springer Verlag, 2017, 16 (2), pp.419-430. ⟨10.1007/s10825-017-0967-x⟩
Journal of Computational Electronics, 2017, 16 (2), pp.419-430. ⟨10.1007/s10825-017-0967-x⟩

International audience; Development of bioinspired devices for energy-efficient computing requires numerical models that can reproduce the global electrical behavior of neurons. We present herein a stochastic model based on the Monte Carlo technique

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d063dc20a0590c32ffd1b2bc563043c
https://hal.archives-ouvertes.fr/hal-03270094

Monte Carlo Study of the Dynamic Performance of a 100-nm-Gate InAlAs/InGaAs Velocity Modulation Transistor

Autor: Alain Cappy, Daniel Pardo, Yannick Roelens, Beatriz G. Vasallo, Javier Mateos, Sylvain Bollaert, Tomas Gonzalez, N. Wichmann

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩

We report a Monte Carlo study of the dynamic behavior of an InAlAs/InGaAs velocity modulation transistor (VMT) based on the topology of a double-gate high electron mobility transistor (DG HEMT), which is a HEMT with two opposite gates controlling the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::135f74d290e3332f658edf30ef850672
https://doi.org/10.1109/ted.2010.2058633

Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications

Autor: Daniel Pardo, Tomas Gonzalez, Alain Cappy, T. Parenty, Sylvain Bollaert, J.M. Lopez

Publikováno v: IEEE Transactions on Electron Devices. 51:521-528

By using a Monte Carlo simulator, the static and dynamic characteristics of 50-nm-gate AlInAs-GaInAs /spl delta/-doped high-electron mobility transistors (HEMTs) are investigated. The Monte Carlo model includes some important effects that are indispe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf31a7e1f8a78ca23d25b1d83c26e0fd
https://doi.org/10.1109/ted.2004.823799

Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs

Autor: Alain Cappy, Daniel Pardo, Virginie Hoel, Tomas Gonzalez, Javier Mateos

Publikováno v: Microelectronics Reliability. 41:73-77

We present a microscopic analysis of electronic noise in short channel δ-doped AlInAs/GaInAs HEMTs. A classical Monte Carlo device simulation, appropriately modified to locally introduce the effects of electron degeneracy and nonequilibrium screenin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79d4b1a30690afb620fe82d54c7c7832
https://doi.org/10.1016/s0026-2714(00)00211-0