Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Alain Campo"'
Autor:
Leticia Tobalina-Pulido, Alain Campo
Publikováno v:
Munibe Antropologia-Arkeologia, Vol 73 (2022)
In 2014 we began an ambitious study of the usage of natural caves in between first and fifth centuries AD in the area between the Ebro and the Pyrenees (Navarre, Basque Country, and northern Aragon). The aim was to make an inventory of all natural ca
Externí odkaz:
https://doaj.org/article/6273c26e22f14e1fa4ce57e2b69b9b88
Publikováno v:
Cuadernos de Arqueología de la Universidad de Navarra, Vol 23, Pp 123-161 (2015)
El estudio de la ocupación de las cuevas ha copado el interés de los investigadores desde el siglo XIX. Sin embargo, han sido los niveles prehistóricos los que han gozado de un mayor protagonismo, dejando en un segundo plano los vestigios postpale
Externí odkaz:
https://doaj.org/article/18ab0183304d4ba48bec34c1cddc02e6
Autor:
Leticia Tobalina-Pulido, Alain Campo
Publikováno v:
Munibe Antropologia-Arkeologia.
[EN] In 2014 we began an ambitious study of the usage of natural caves in between first and fifth centuries AD in the area between the Ebro and the Pyrenees (Navarre, Basque Country, and northern Aragon). The aim was to make an inventory of all natur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0494cf9f7340625a5a84999ae0e12eb
https://doi.org/10.21630/maa.2022.73.07
https://doi.org/10.21630/maa.2022.73.07
Autor:
Nicolas Posseme, Sylvain Joblot, Cécile Jenny, Denis Guiheux, Alain Campo, Erwine Pargon, Marion Croisy, C. Richard
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
International audience; Dry strip processes performed after implantation steps have to remove efficiently the photoresist mask protecting the non-implanted area without leaving any defects on the substrate. In this study bubble-like defects called bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ca24b8a1bfd4d0517213bee595909a
https://doi.org/10.1016/j.mee.2018.03.001
https://doi.org/10.1016/j.mee.2018.03.001
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:014007
Using alkaline chemistries for SiGe based Gate-All-Around architectures fabrication is still a challenge. This work reports a detailed study of Si to Si0.7Ge0.3 selective etching using NH4OH, TMAH and TEAH alkaline etchants. These alkaline solutions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9814dc9d487f8ab05b9c5f9574dabea
https://doi.org/10.1149/2162-8777/abddd8
https://doi.org/10.1149/2162-8777/abddd8
Autor:
Denis Guiheux, Erwine Pargon, Marion Croisy, Nicolas Posseme, C. Richard, Cécile Jenny, Alain Campo
Publikováno v:
Solid State Phenomena
Solid State Phenomena, 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France
Solid State Phenomena, Trans Tech Publications Ltd 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019, May 2016, Grenoble, France. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Solid State Phenomena, 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France
Solid State Phenomena, Trans Tech Publications Ltd 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019, May 2016, Grenoble, France. ⟨10.4028/www.scientific.net/SSP.255.111⟩
With the increase of implantation dose in new technologies, implanted photoresist stripping is even more challenged in terms of efficiency and substrate consumption. In this work, the effect of implantation parameters (energy and implanted specie) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::285861a3d11ad9938b30ed076861d74d
https://doi.org/10.4028/www.scientific.net/ssp.255.111
https://doi.org/10.4028/www.scientific.net/ssp.255.111
Publikováno v:
Cuadernos de Arqueología. 23:123-161
The study of the caves occupation has cornered the interest of the researchers since the 19th century. Nevertheless, their prehistoric levels are which have been the biggest interest, leaving in a background the post‐Paleolithic vestiges. Although,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a478746e5f91d02b5dbf51c9cdf00184
https://doi.org/10.15581/012.23.123-161
https://doi.org/10.15581/012.23.123-161
Autor:
Sébastien Barnola, Virginie Loup, Sana Rachidi, C. Vizioz, Jean-Michel Hartmann, Alain Campo, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033002
The fabrication of Si0.7Ge0.3 sub-10 nm nanochannels in gate-all-around devices requires a highly selective Si isotropic etching process. The etching of Si selectively to Si0.7Ge0.3 with CF4/N2/O2 downstream plasma has been investigated using various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70893cdf7b6eae5df2bcbdf16b88414c
https://doi.org/10.1116/1.5143118
https://doi.org/10.1116/1.5143118
Autor:
Cécile Jenny, Erwine Pargon, Denis Mariolle, Marion Croisy, C. Richard, Nicolas Posseme, Denis Guiheux, Christophe Poulain, Alain Campo
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (1), pp.011201
Alternative approaches are now required to fulfill the strict requirements of photoresist (PR) dry strip process after high-dose implantation. A better understanding of the PR degradations induced by the ion bombardment during the implantation is thu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1267dbc23a3e5c00c220a34b769336a
https://hal.univ-grenoble-alpes.fr/hal-01942735
https://hal.univ-grenoble-alpes.fr/hal-01942735
Autor:
Sonarith Chhun, Laurent Vallier, Alain Campo, Gilles Cunge, Côme de Buttet, Philippe Garnier, S. Zoll, Emilie Prevost, Thomas Massin, Patrick Maury
Publikováno v:
SPIE Proceedings.
Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261ab2cd95fd4103d27f92bd846b003a
https://doi.org/10.1117/12.2257971
https://doi.org/10.1117/12.2257971