Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Alain Bravaix"'
Publikováno v:
Micromachines, Vol 15, Iss 2, p 205 (2024)
A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The stressing gate-voltage (VGS) dependence is compared to hot-hole (HH) injection,
Externí odkaz:
https://doaj.org/article/8716c39e8dc44717abcb3bfe30bbf7dd
Autor:
Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS)
2022 IEEE International Reliability Physics Symposium (IRPS), Mar 2022, Dallas, United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩
IEEE International Reliability Physics Symposium (IRPS 2022)
IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, TX (en ligne), United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩
2022 IEEE International Reliability Physics Symposium (IRPS), Mar 2022, Dallas, United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩
IEEE International Reliability Physics Symposium (IRPS 2022)
IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, TX (en ligne), United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩
International audience; We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3ec262cb8067c9833ec36338d5b0104
https://hal.science/hal-03659269/document
https://hal.science/hal-03659269/document
Publikováno v:
IRPS
IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-5, ⟨10.1109/IRPS46558.2021.9405214⟩
IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-5, ⟨10.1109/IRPS46558.2021.9405214⟩
International audience; The study of parameter drift due to interface defect generation in “Off” mode or near Vth is very complex, because it is often concomitant with hot hole trapping which induces turnaround effects. Improving device aging mod
Publikováno v:
2020 IEEE International Reliability Physics Symposium (IRPS)
2020 IEEE International Reliability Physics Symposium (IRPS), Apr 2020, Dallas, France. pp.1-8, ⟨10.1109/IRPS45951.2020.9129214⟩
IRPS
2020 IEEE International Reliability Physics Symposium (IRPS), Apr 2020, Dallas, France. pp.1-8, ⟨10.1109/IRPS45951.2020.9129214⟩
IRPS
International audience; Extended Drain MOS (EDMOS) transistors were studied about hot-carrier (HC) degradation and its involvement in hard breakdown (BD) events as these smart power devices represent a big challenge to optimize under Off/On mode swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b0c7cd42813db742bb5c1b9842b9f3e
https://hal.science/hal-03659275
https://hal.science/hal-03659275
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2021, Microelectronics Reliability, 126, pp.114342. ⟨10.1016/j.microrel.2021.114342⟩
Microelectronics Reliability, 2021, Microelectronics Reliability, 126, pp.114342. ⟨10.1016/j.microrel.2021.114342⟩
International audience; Improving device aging models requires to consider hot-carrier degradation (HCD) between On/Off modes and interaction of these different damage rate mechanisms as well as the dynamic effects. As DC characterization of HCD mode
Publikováno v:
Microelectronics Reliability. :13-24
In this work, we have demonstrated that many elements are needed on top of conventional foundry reliability knowledge to enable robust automotive products in compliance with all restrictive norms. For intrinsic reliability, both reliability models (a
Publikováno v:
Microelectronics Reliability. 114:113811
P- and N- channel Extended Drain MOSFETs (EDMOS) are analyzed through its sensitivity to Hot-Carrier (HC) degradation using accelerated lifetime technique. N- and P- channel EDMOS are optimized for a gate-length LG = 0.5 μm, with gate-oxide thicknes
Publikováno v:
Microelectronics Reliability. 64:163-167
We have developed the possibility of using healing phases on hot-carrier (HC) degraded transistors from devices to logic cells (1) by the combined effects of oxide charge neutralization and channel shortening (2) using back bias V-B sensing effects i
Publikováno v:
Microelectronics Reliability. 64:158-162
This paper shows the advantages of using body bias. Experiments are performed in 14 nm and 28 nm UTBB FDSOI transistors and ring oscillators (ROs). The impact of body bias on performance and reliability is highlighted. The body biasing offers signifi