Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alain Aurand"'
Autor:
Michel Haond, Maud Vinet, Alain Aurand, V. Farys, E. Baylac, A. Claverie, E. Petitprez, Emmanuel Josse, Raphael Bingert, M-A. Jaud, T. Poiroux, E. Bechet, Jean-Claude Marin, Didier Dutartre, S. Delmedico, Olivier Weber, C. Bernicot, E. Bernard, P. Sardin, F Andrieu, S. Ortolland, Joris Lacord, E. Serret, R. Berthelon, Patrick Scheer, A. Pofelski, Pierre Perreau, Denis Rideau
Publikováno v:
VLSI Technology, 2016 IEEE Symposium on
VLSI Technology, 2016 IEEE Symposium on, 2016, Unknown, Unknown Region. ⟨10.1109/VLSIT.2016.7573425⟩
2016 IEEE Symposium on VLSI Technology
VLSI Technology, 2016 IEEE Symposium on, 2016, Unknown, Unknown Region. ⟨10.1109/VLSIT.2016.7573425⟩
2016 IEEE Symposium on VLSI Technology
cited By 4; International audience; We report on the main local layout effect in 14nm Ultra-Thin Buried oxide and Body Fully Depleted Silicon On Insulator (UTBB-FDSOI) CMOS technology [1]. This effect is demonstrated by Nano-Beam Diffraction to be di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb1321d14ae9eb2e1bfa303be111c6af
https://doi.org/10.1109/vlsit.2016.7573425
https://doi.org/10.1109/vlsit.2016.7573425
Autor:
Thierry Devoivre, Yorick Trouiller, Raphael Bingert, Michel Luc Cote, Richard Rouse, Philippe Hurat, Alain Aurand, Jean-Claude Marin, Nishath Verghese, Eric Balossier, Florent Vautrin
Publikováno v:
SPIE Proceedings.
Leveraging silicon validation, a model-based variability analysis has been implemented to detect sensitivity to systematic variations in standard cell libraries using a model-based solution, to reduce performance spread at the cell level and chip lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d633165acfb02ee4b77ff76e733e92
https://doi.org/10.1117/12.772897
https://doi.org/10.1117/12.772897