Zobrazeno 1 - 10
of 15 357
pro vyhledávání: '"AlN"'
Autor:
Liang, Zhang
Publikováno v:
Soldering & Surface Mount Technology, 2024, Vol. 36, Issue 5, pp. 268-275.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/SSMT-05-2023-0021
Autor:
Wenlong Xie, Yuyang Gao, Hong Yang, Xin Guo, Jiwei Zhao, Jianxin Zhou, Xiaojun Luo, Jiangfeng Song, Guangsheng Huang, Bin Jiang, Fusheng Pan
Publikováno v:
Journal of Materials Research and Technology, Vol 33, Iss , Pp 2377-2390 (2024)
The AlN particles reinforced Mg-10Gd-3Y–1Zn (GWZ) composites were prepared by mixing AlN/Al particles using ball milling followed by stirring casting method. The influence of AlN/Al particles on the microstructural evolution and high-temperature me
Externí odkaz:
https://doaj.org/article/22926a34d1ed4668bc515c4c0a84ff99
Autor:
Xuefei Wang, Lunyiu Nie, Qingli Zhu, Zhichao Zuo, Guanmo Liu, Qiang Sun, Jidong Zhai, Jianchu Li
Publikováno v:
BMC Cancer, Vol 24, Iss 1, Pp 1-8 (2024)
Abstract Purpose A practical noninvasive method is needed to identify lymph node (LN) status in breast cancer patients diagnosed with a suspicious axillary lymph node (ALN) at ultrasound but a negative clinical physical examination. To predict ALN me
Externí odkaz:
https://doaj.org/article/93e0e22943464794a8109fc096e12942
Publikováno v:
Journal of Materials Research and Technology, Vol 31, Iss , Pp 412-419 (2024)
Reinforcement configuration of Al composites has recently been at the center of attention. In this study, through the analysis of microstructure and tensile properties, effects of Cu content on the reinforcing behaviors of AlN network were investigat
Externí odkaz:
https://doaj.org/article/2bf757c56c77462c8120a9698e2ef402
Autor:
Павел Владимирович Середин, Шукрилло Шамсидинович Шарофидинов, Дмитрий Леонидович Голощапов, Никита Сергеевич Буйлов, Константин Александрович Еремеев, Шаира Абдувалиевна Юсупова, Сергей Арсеньевич Кукушкин
Publikováno v:
Конденсированные среды и межфазные границы, Vol 26, Iss 3 (2024)
Впервые методом хлорид-гидридной эпитаксии на гибридной подложке SiC/Si, синтезированной методом согласованного замещения атомов, сформи
Externí odkaz:
https://doaj.org/article/ee3043640ca54884b1d5a92dacc982e6
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 25, Pp n/a-n/a (2024)
Abstract The crystalline quality and degree of c‐axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary impor
Externí odkaz:
https://doaj.org/article/01d9648e86ef47c1afdb3f6639e53c69
Autor:
Sheng Zhou, Jinfang Wang, Weili Wang, Ling Shao, Sheng Dai, Dongdong Zhu, Qingsong Lu, Meng Zhang, Yong Zhang, Liu Zhu
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 3986-3995 (2024)
Copper and copper alloy are commonly used to fabricate ship propellers and sealing valves that encounter harsh corrosion and wear. To improve their service life, Cu coating and Cu–AlN composite coatings with different volume content of AlN (10%, 20
Externí odkaz:
https://doaj.org/article/353b6decacae49a9bbc2436bf25ed12f
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 4920-4928 (2024)
Vacuum induction melting has proven to be a cost-efficient way to fabricate TiNi alloys with excellent compositional homogeneity and uniformity. However, the high reactivities of TiNi alloys generate aggressive melt attacks with a particular ceramic
Externí odkaz:
https://doaj.org/article/9d844f9ef6e34f3a9349d6ae1f6e6cd3
Autor:
Muhammad Izzuddin Abd Samad, Syazwani Izrah Badrudin, Darven Raj Ponnuthurai, Marwan Mansor, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, Rhonira Latif
Publikováno v:
Journal of Materials Research and Technology, Vol 29, Iss , Pp 2248-2257 (2024)
Aluminium nitride (AlN) can be sputter-deposited onto a substrate to form polycrystalline or single crystal AlN thin film layer. Highly crystalline AlN in ⟨100⟩ orientation has found its application in high-frequency acoustic wave resonators. The
Externí odkaz:
https://doaj.org/article/b15273dcfa03442891358d8648197b63
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 4, Pp 100795- (2024)
High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure de
Externí odkaz:
https://doaj.org/article/bd58bf1244834f938425c913088fa23b