Zobrazeno 1 - 10
of 16 973
pro vyhledávání: '"AlGaN"'
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-7 (2024)
Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} , or {1 $$\over
Externí odkaz:
https://doaj.org/article/1a016f3b82bb416cbdd1ab13ccfbaabf
Autor:
Shanshan Yang, Meixin Feng, Yuzhen Liu, Wenjun Xiong, Biao Deng, Yingnan Huang, Chuanjie Li, Qiming Xu, Yanwei Shen, Qian Sun, Hui Yang
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-5 (2024)
High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching. In this paper, the effects of ICP etching para
Externí odkaz:
https://doaj.org/article/49b164dd3b164480b12360c4e1aa190a
Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 698-702 (2024)
In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperatu
Externí odkaz:
https://doaj.org/article/e246a3fb2ead4f2f88be27115a184085
Autor:
Partha Banerjee, Aritra Acharyya, Rajib Das, Arindam Biswas, Anup Kumar Bhattacharjee, Saurav Mallik, Haya Mesfer Alshahrani, E. Elshiekh, Mohamed Abbas, Ben Othman Soufiene
Publikováno v:
IEEE Access, Vol 12, Pp 123656-123677 (2024)
The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG). Utilizing a nanostrip patch type pla
Externí odkaz:
https://doaj.org/article/82537b495f144642b49a3e0312dbd9d4
Publikováno v:
IEEE Access, Vol 12, Pp 50177-50183 (2024)
Novel In0.12Al0.88N/AlN/AlxGa $_{1-\mathrm {x}}\text{N}$ /In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded A
Externí odkaz:
https://doaj.org/article/6fb213d6d9ba4f258f3b1441c4e031e3
Autor:
Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of $6.0 ~\mu \text{m}$ as int
Externí odkaz:
https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0
Autor:
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda
Publikováno v:
IEEE Access, Vol 12, Pp 36447-36456 (2024)
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C. Both temperatures reduce
Externí odkaz:
https://doaj.org/article/67c82442aac946c19b0d01e74a8e4d0f
Publikováno v:
IEEE Access, Vol 12, Pp 16989-16998 (2024)
In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the ch
Externí odkaz:
https://doaj.org/article/f0f3459fbeaa415eaa9c4a843fc3e325
Autor:
Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu
Publikováno v:
IEEE Access, Vol 12, Pp 16089-16094 (2024)
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density
Externí odkaz:
https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822
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