Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Al2O3/TiO2-x memristor"'
Autor:
Dominique Drouin, Fabien Alibart, Frédéric Brousseau, Yann Beilliard, Serge Ecoffey, François Paquette
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (44), pp.445205. ⟨10.1088/1361-6528/aba6b4⟩
Nanotechnology, 2020, 31 (44), pp.445205. ⟨10.1088/1361-6528/aba6b4⟩
Nanotechnology, Institute of Physics, 2020, 31 (44), pp.445205. ⟨10.1088/1361-6528/aba6b4⟩
Nanotechnology, 2020, 31 (44), pp.445205. ⟨10.1088/1361-6528/aba6b4⟩
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff51806400fe70ff6e4afbbaf13bf9cc
Autor:
Dominique Drouin, Fabien Alibart, Serge Ecoffey, François Paquette, Yann Beilliard, Frédéric Brousseau
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025305-025305-7 (2020)
AIP Advances
AIP Advances, 2020, 10 (2), pp.025305. ⟨10.1063/1.5140994⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (2), pp.025305. ⟨10.1063/1.5140994⟩
AIP Advances
AIP Advances, 2020, 10 (2), pp.025305. ⟨10.1063/1.5140994⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (2), pp.025305. ⟨10.1063/1.5140994⟩
International audience; Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e66585bcda88e9d028fe421276542e5e
https://doaj.org/article/a29e4e5dfb244ab0ac1a9d4e507a9e37
https://doaj.org/article/a29e4e5dfb244ab0ac1a9d4e507a9e37
Akademický článek
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