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pro vyhledávání: '"Al-Baldawi AmmarM"'
Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method
Publikováno v:
Engineering and Technology Journal, Vol 25, Iss 6, Pp 797-807 (2007)
In this paper, a laser ellipsometric method is implemented to study theformation of oxide films on silicon substrate at room temperature in air. Twolasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp,were used as a light source
Externí odkaz:
https://doaj.org/article/5f54617f55404c8a8a5afe9da884c9af
