Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Akshey Sehgal"'
Publikováno v:
Solid State Phenomena. 282:273-277
Having successfully developed high volume manufacturing (HVM) processes for the 0x nm node, the semiconductor industry is now engaged in developing the next advanced node. This 0xnm node development is being accomplished by a combination of shrinking
Autor:
J. Klatt, Todd Thibeault, Akshey Sehgal, Craig Printy, Scott Ruby, Jamal Ramdani, Hsin Hsiung Huang
Publikováno v:
Solid State Phenomena. :127-130
This work details the investigation of potential problems in Complimentary BiCMOS technology, especially PNP transistors arrays. Optical examination of the wafer revealed defects in the P Buried Layer (PBL) areas of the die. Electrical testing correl
Autor:
Sridhar Kuchibhatla, Jagdish Prasad, Akshey Sehgal, Yan Ping Shen, Dhiman Bhattacharyya, Wang Haiting
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
As the size of the semiconductor device continues to shrink, two integration approaches are used for gate module; (1) gate first, and (2) gate last. The gate last approach requires removal of thin (10–30Å) titanium nitride (TiN) diffusion blockin
Autor:
Jinping Liu, Bharat Krishnan, Sridhar Kuchibhatla, Akshey Sehgal, Jing Wan, Hui Zhan, Hsiao-Chi Peng
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Dry oxide removal techniques are used as pre-spacer cleans to remove sidewall oxide (without undercutting the gate oxide and maintaining the gate CD (critical dimension)) in 20 nm HVM (high volume manufacturing). This results in arsenic containing re
Autor:
Dhiman Bhattacharyya, Bharat Krishnan, Akshey Sehgal, Hsiao-Chi Peng, Sridhar Kuchibhatla, Jing Wan, Shi You
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Defect elimination from the Spacers and Junctions modules has been shown to increase yield in 20 nm HVM (high volume manufacturing). However, other defects such as surface particles and lifted pattern were also found in these modules. These defects f
Autor:
Scott Ruby, Akshey Sehgal, J. Klatt, Thanas Budri, Jamal Ramdani, Paul Allard, Scott Arsenault, Wibo van Noort, Albert Schnieders
Publikováno v:
Surface and Interface Analysis. 43:609-611
D & TOF-SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle-type defects. In this paper D & ToF-SIMS are used to identify metals in the P-type buried layer
Autor:
Jon Tao, Don Getchell, Peyman Hojabri, Akshey Sehgal, Wipawan Yindeepol, Andre P. Labonte, Yaojian Leng, Alan Buchholz, Christopher C. Joyce, Saurabh Desai, Stefaan Decoutere, Robert A. Malone, Natasha Lavrovskaya, T. Krakowski, Wibo van Noort, Paul Allard, Jamal Ramdani, Craig Printy, Heather McCulloh, Jeff A. Babcock, Greg Cestra, Scott Ruby, Patrick Mccarthy
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·V A =17,000
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Atomic Force Microscopy, Deep Level Transient Spectroscopy and Secondary Ion Mass Spectroscopy were used to study defects created in the P Buried Layer while using a BF 2 implant. The P Buried Layer defects were traced to the unintentional co-implant
Publikováno v:
ECS Meeting Abstracts. :1033-1033
Introduction Silicides have been used in self-aligned processes for several generations of CMOS devices, with the aim of reducing the sheet resistance and providing stable Ohmic contacts with low contact resistance on gate, source and drain areas.1 T
Autor:
Akshey Sehgal
Publikováno v:
ECS Meeting Abstracts. :2108-2108
not Available.