Výsledky vyhledávání - "Akshay Sahota"

Akademický článek

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Autor: Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim

Publikováno v: AIP Advances, Vol 11, Iss 11, Pp 115213-115213-6 (2021)

In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leaka

Externí odkaz: https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d

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Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework

Autor: Jang-Sik Lee, Yong Chan Jung, Harrison Sejoon Kim, Akshay Sahota, Dan N. Le, Jinho Ahn, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Si Joon Kim

Publikováno v: IEEE Electron Device Letters. 43:21-24

In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputterin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e87dee57e9aa912ad0ee6ac1f69924a
https://doi.org/10.1109/led.2021.3130828

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Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

Autor: Jaidah Mohan, Akshay Sahota, Si Joon Kim, Jang-Sik Lee, Harrison Sejoon Kim, Min-Ji Kim, Yong Chan Jung, Antonio T. Lucero, Jiyoung Kim, Rino Choi

Publikováno v: ACS Applied Electronic Materials. 3:2309-2316

Leakage current, that causes interferences in the read/write operation, arising from neighboring unselected or half-selected memory cells is considered as one of the main hurdles to be overcome to ...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c670b86dd70cf72d7431292f666d4e0
https://doi.org/10.1021/acsaelm.1c00197

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Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings

Autor: Dan N. Le, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Lance Lee, Yong Chan Jung, Jiyoung Kim, Harrison Sejoon Kim, Akshay Sahota, Arul Vigneswar Ravichandran, Si Joon Kim, Jaebeom Lee, Su Min Hwang

Publikováno v: ACS Applied Nano Materials. 4:2558-2564

In recent times, the requirements have become extremely stringent for employing silicon nitride (SiNx) films in various types of applications. For instance, high etch resistance coating is required...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb5391f4ee58adf1e60a4537f6199180
https://doi.org/10.1021/acsanm.0c03203

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Autor: Yong Chan Jung, Xiaobing Zhou, Xin Meng, Arul Vigneswar Ravichandran, Harrison Sejoon Kim, Jinho Ahn, Si Joon Kim, Young-Chul Byun, Byung Keun Hwang, Su Min Hwang, Akshay Sahota, Jiyoung Kim, Lance Lee

Publikováno v: Journal of Materials Chemistry C. 8:13033-13039

Trisilylamine (TSA), an exemplary chlorine and carbon-free commercial silylamine precursor, is well-known to induce improvements in the process and properties of silicon nitride (SiNx) thin films grown using atomic layer deposition (ALD). Herein, we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d76b98a0a36945baa9460769f3e92ca1
https://doi.org/10.1039/d0tc02866e

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Autor: Jinho Ahn, Harrison Sejoon Kim, Jaidah Mohan, Pil-Ryung Cha, Si Joon Kim, Yong Chan Jung, Kihyun Kim, Namhun Kim, Hyun Yong Yu, Jiyoung Kim, Rino Choi, Chadwin D. Young, Akshay Sahota, Su Min Hwang

Publikováno v: Materials, Vol 13, Iss 2968, p 2968 (2020)
Materials
Volume 13
Issue 13

The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc8bfb370513d1e58007648b318fee79
https://www.mdpi.com/1996-1944/13/13/2968

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