Atomically Thin Gallium Nitride for High-Performance Photodetection

Autor: Jain, SK, Syed, N, Balendhran, S, Abbas, SAT, Ako, RT, Low, MX, Lobo, C, Zavabeti, A, Murdoch, BJ, Gupta, G, Bhaskaran, M, Crozier, KB, Russo, SP, Daeneke, T, Walia, S

Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for devic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______363::0eadcb0e1827ffb04496073f277511b7
https://hdl.handle.net/10453/170808

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