Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Akiyoshi Tachikawa"'
Autor:
Kazuto Kawakami, Atsushi Ikari, Wataru Ohashi, Yoshiharu Inoue, Hideki Yokota, Katsuhiko Nakai, Jun Takahashi, Akiyoshi Tachikawa
Publikováno v:
Japanese Journal of Applied Physics. 42:363-370
Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals grown under various growth conditions were investigated by transmission electron microscopy. The morphology and volume of the void defects depended strongly on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bda2280b6d8f1632bba8a59db584ff0
https://doi.org/10.1143/jjap.42.363
https://doi.org/10.1143/jjap.42.363
Autor:
Akiyoshi Tachikawa, Hideki Yokota, Katsuhiko Nakai, Jun Takahashi, Yoshiharu Inoue, Wataru Ohashi, Atsushi Ikari, Kouichi Kitahara, Yasumitsu Ohta
Publikováno v:
Journal of Applied Physics. 89:4301-4309
Oxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad70dec17573472c4839d9482f4276f6
https://doi.org/10.1063/1.1356425
https://doi.org/10.1063/1.1356425
Autor:
Akiyoshi, Tachikawa
Publikováno v:
経営情報科学. 11:21-110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::4832d8d8d900d62702b8bad29fbbf37e
http://id.nii.ac.jp/1170/00000172/
http://id.nii.ac.jp/1170/00000172/
Publikováno v:
IEEE Transactions on Electron Devices. 43:527-534
We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V/sub th/) distribution in a 3-in wafer shows standard deviati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45fc1b9ea5161b6d5f5ad457824fdfe0
https://doi.org/10.1109/16.485533
https://doi.org/10.1109/16.485533
Publikováno v:
Journal of Crystal Growth. 145:353-357
The preheating temperature dependence of the surface morphology and crystallinity of GaAs grown by metalorganic chemical vapor deposition (MOCVD) on Si annealed in H 2 at 1100°C within a different furnace is investigated by atomic force microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f563d884000ba135c67e0ec17ba7063f
https://doi.org/10.1016/0022-0248(94)91075-8
https://doi.org/10.1016/0022-0248(94)91075-8
Publikováno v:
Applied Physics Letters. 64:3127-3129
We report on a study of microscopic distribution of threshold voltage ( Vth) for GaAs/AlGaAs high electron mobility transistors (HEMTs) on a Si substrate grown by metal‐organic chemical vapor deposition (MOCVD). Using selective dry etching, the sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfdeb8989e3b006a42bd4d4598bfcf5
https://doi.org/10.1063/1.111368
https://doi.org/10.1063/1.111368
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b480f91d461b5f790550f6305f74d10e
https://doi.org/10.7567/ssdm.1992.s-ii-5
https://doi.org/10.7567/ssdm.1992.s-ii-5
Publikováno v:
Japanese Journal of Applied Physics. 38:2704
We report on the improvement in the microwave performance of metal-semiconductor field effect transistors (MESFETs) fabricated on GaAs/Si with a resistive layer at the GaAs-Si interface. This layer was obtained by using a p-type AlGaAs layer or an ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::118ef2c3b968db69873bf0fbf5cf69d9
https://doi.org/10.1143/jjap.38.2704
https://doi.org/10.1143/jjap.38.2704
Publikováno v:
Japanese Journal of Applied Physics. 37:3205
We report on the reliability of metal-semiconductor field effect transistors (MESFETs) fabricated on GaAs/Si compared to that of MESFETs on GaAs/GaAs, based on the results of the high-temperature storage test under dc bias. The failure mode was the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f243e0a714155e08146635c13e2d893
https://doi.org/10.1143/jjap.37.3205
https://doi.org/10.1143/jjap.37.3205
Publikováno v:
Japanese Journal of Applied Physics. 35:6013
The free carrier concentration in GaAs-on-Si was measured by Raman scattering at the GaAs back face which is revealed by etching the Si substrate. Asymmetric Raman spectra attributed to the coupled plasmon-longitudinal optical (LO) phonon mode ( L+)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453dfaa6cf3eb08582cba8a726e13c53
https://doi.org/10.1143/jjap.35.6013
https://doi.org/10.1143/jjap.35.6013