Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Akiyoshi Ogane"'
Autor:
Nozomu Tokuoka, Satoshi Tohoda, Kenta Matsuyama, Toshihiro Kinoshita, Akiyoshi Ogane, Hitoshi Sakata, Mikio Taguchi, Yuya Nakamura, Ayumu Yano, Daisuke Fujishima, Hiroshi Kanno, Eiji Maruyama
Publikováno v:
Journal of Non-Crystalline Solids. 358:2219-2222
To reduce the power generation cost of heterojunction with intrinsic thin layer (HIT) solar cells, it is necessary to use a thinner crystalline silicon wafer, as well as to improve the conversion efficiency. We have experimentally confirmed that V OC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7671d1b3ddbc7c9d98b00777c20b7939
https://doi.org/10.1016/j.jnoncrysol.2012.03.025
https://doi.org/10.1016/j.jnoncrysol.2012.03.025
Publikováno v:
Journal of Crystal Growth. 311:789-793
In order to obtain higher performance of polycrystalline silicon (poly-Si) thin film devices, crystallinity of poly-Si thin films should be enhanced. In this study, poly-Si thin films with thickness of 10 μm heading for the solar cell application we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a51d91cacd716be365f0fd21a1bec7
https://doi.org/10.1016/j.jcrysgro.2008.09.098
https://doi.org/10.1016/j.jcrysgro.2008.09.098
Publikováno v:
Japanese Journal of Applied Physics. 47:5320-5323
The effect of passivation layers (SiOX, SiNX, etc.) using plasma-enhanced chemical vapor deposition (PECVD) for crystalline silicon solar cells showed high surface recombination with decreasing of deposition temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff66f5011fb8d3d2ee531f72addcffb
https://doi.org/10.1143/jjap.47.5320
https://doi.org/10.1143/jjap.47.5320
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:443-446
Electroreflectance (ER) spectroscopy has been performed on Si nanocrystals (NCs) fabricated from n-type crystalline Si substrates. The Si NCs were fabricated by anodization with varying anodizing current densities. Two ER features were observed at 1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4042a0ef6fb85de8e2371312d6250d
https://doi.org/10.1007/s10854-007-9252-2
https://doi.org/10.1007/s10854-007-9252-2
Autor:
Antonín Fejfar, Akiyoshi Ogane, Yukiharu Uraoka, T. Yamazaki, Takashi Fuyuki, S. Honda, Jan Kočka
Publikováno v:
Journal of Non-Crystalline Solids. 352:955-958
Electronic properties of poly-Si thin films fabricated by atmospheric pressure chemical vapor deposition (APCVD) were improved by annealing in H2O or D2O vapors. Hall mobility was improved from 4.45 cm−2/V s to 25.1 cm−2/V s after 1 h D2O vapor t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5249640a50e80560382de48f861d9b0d
https://doi.org/10.1016/j.jnoncrysol.2006.01.061
https://doi.org/10.1016/j.jnoncrysol.2006.01.061
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
We propose a novel technique of "Luminoscopy" in which the deficiencies in the cells and modules can be clearly detected by photographic surveying of electroluminescence (EL) without any probing tools [1]. Under the forward bias condition, the cell e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87037942c5ed8244ce9e5bd8b1d76fb4
https://doi.org/10.1109/wcpec.2006.279607
https://doi.org/10.1109/wcpec.2006.279607
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
The electroluminescence (EL) intensity from Si cells under the forward bias was found to have one to one quantitative agreement with the minority carrier diffusion length. Based on the diffusion equation, the EL intensity was analyzed relating to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fcd4a09d898d7156e31477f5249be1
https://doi.org/10.1109/wcpec.2006.279602
https://doi.org/10.1109/wcpec.2006.279602
Publikováno v:
Applied Physics Express. 5:016501
Selective emitter formation for crystalline silicon (c-Si) solar cells is very important to increase conversion efficiency. Laser doping (LD) is a very simple method for selective emitter formation because the use of masks and photolithography is unn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136c40115f09ad98fe870c3ad8fb518e
https://doi.org/10.1143/apex.5.016501
https://doi.org/10.1143/apex.5.016501
Autor:
Yukiharu Uraoka, Akiyoshi Ogane, Takashi Fuyuki, Hiroshi Yano, Tomoaki Hatayama, Ayumi Tani, Athapol Kitiyanan
Publikováno v:
Journal of Applied Physics. 106:043717
The electroluminescence (EL) images obtained under forward and reverse biases in multicrystalline silicon solar cells have been investigated. Under reverse bias, Si solar cells emit EL mainly in the visible wavelength as clusters of bright spots. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd3618656e3bfa3d0fdd18587939dfd
https://doi.org/10.1063/1.3204942
https://doi.org/10.1063/1.3204942
Autor:
Yoshiyuki Nishihara, Kenji Hirata, Takashi Fuyuki, Akiyoshi Ogane, Athapol Kitiyanan, Koyo Horiuchi, Yu Takahashi
Publikováno v:
Japanese Journal of Applied Physics. 48:071201
The laser-doping technique in silicon solar cell fabrication is now attracting considerable attention because of its suitability for the low-cost processing of high-efficiency silicon solar cells; it can be performed at room temperature in air and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8013508f37072464d149a56a8bf2011
https://doi.org/10.1143/jjap.48.071201
https://doi.org/10.1143/jjap.48.071201