Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Akitaka Murata"'
Autor:
Akitaka Murata, Yosuke Kondo, Daisaku Ikoma, Yasuyuki Ishikawa, Makoto Nagata, Shuji Agatsuma, Ko Oyama
Publikováno v:
2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE.
This paper describes the results of evaluation and simulation modeling of the influence of a silicon substrate propagation disturbance on circuit operation in silicon-on-insulator BCD (BIPOLAR/CMOS/LDMOS) process. In the evaluation, the susceptibilit
Autor:
Koji Yamamoto, Yaeko Sasa, Toshiharu Arakawa, Kazuhiro Inagaki, Kimihito Hirose, Mikio Nishida, Yoshihiro Okamoto, Akitaka Murata
Publikováno v:
Iryo Yakugaku (Japanese Journal of Pharmaceutical Health Care and Sciences). 30:266-270
Autor:
Yoshihiro Okamoto, Kazuhiro Inagaki, Manako Hanya, Mikio Nishida, Akitaka Murata, Kimihito Hirose, Hiroo Ishihara, Koji Yamamoto, Toshiharu Arakawa, Hisayoshi Sugihara, Yaeko Sasa
Publikováno v:
Iryo Yakugaku (Japanese Journal of Pharmaceutical Health Care and Sciences). 27:15-23
Autor:
Noriyuki Miura, Yuji Harada, Makoto Nagata, Kouji Ichikawa, Akitaka Murata, Kumpei Yoshikawa, Syuji Agatsuma
Publikováno v:
2013 IEEE International Meeting for Future of Electron Devices, Kansai.
This paper presents the measurements of power noise (Vdd noise) waveforms of a 5-stage inverter chain, using on-chip noise monitor circuits (OCM). The fine resolution of 0.4 mV in voltage and 12.5 ps in timing are realized. The undesired voltage vari
Autor:
Shuji Agatsuma, Daisaku Ikoma, Takahiro Tsuda, Kouji Ichikawa, Akitaka Murata, Yuuki Araga, Yuji Harada, Kumpei Yoshikawa, Makoto Nagata
Publikováno v:
ResearcherID
EMC Compo
EMC Compo
In this paper, the susceptibility of a CMOS bandgap voltage reference (BGR) to external noise was investigated using an on-chip waveform monitor circuit in conjunction with circuit simulations. A Direct RF Power Injection method was employed for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1669f2af607561020931cff7d7b348f5
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000335537200044&KeyUID=WOS:000335537200044
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000335537200044&KeyUID=WOS:000335537200044
Autor:
Harada, Yuji, Yoshikawa, Kumpei, Miura, Noriyuki, Nagata, Makoto, Murata, Akitaka, Agatsuma, Syuji, Ichikawa, Kouji
Publikováno v:
2013 IEEE International Meeting for Future of Electron Devices, Kansai; 2013, p102-103, 2p