Zobrazeno 1 - 10
of 609
pro vyhledávání: '"Akira Toriumi"'
Publikováno v:
NPG Asia Materials, Vol 15, Iss 1, Pp 1-6 (2023)
Abstract An understanding of the phase transitions at the nanoscale is essential in state-of-the-art engineering1–5, instead of simply averaging the heterogeneous domains formed during phase transitions6,7. However, as materials are scaled down, th
Externí odkaz:
https://doaj.org/article/5539626b693c47358586f7dbfe781b63
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Xiuyan Li, Akira Toriumi
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips i
Externí odkaz:
https://doaj.org/article/8a4844234fa147468cdc00cc60d99f18
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1207-1212 (2018)
The poor reliability of the GeO2/Ge stack is improved by appropriate cation doping [e.g., Yttrium (Y)-doping] into amorphous GeO2 as a result of the enhancement of the GeO2 network structure stability. In this paper, we discuss the impact of Y-doping
Externí odkaz:
https://doaj.org/article/4362c9261a8d46fd9f3751b9664f311a
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095013-095013-5 (2019)
In this work, we investigated the band alignment at bismuth (Bi)/germanium (Ge) and Bi/silicon (Si) interfaces to understand the mechanism of strong Fermi level pinning (FLP) at element metal/Ge and/Si interfaces. Bi/Ge and/Si interfaces exhibit almo
Externí odkaz:
https://doaj.org/article/e6c58d397e904f4d8a951009760e26f7
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015114-015114-6 (2016)
We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge). By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulatin
Externí odkaz:
https://doaj.org/article/86fbdee8bbf24e2da9b375e87b75c14f
Autor:
Akira Toriumi, Xiuyan Li
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize qu
Autor:
Maki Suemitsu, Kosuke Nagashio, Karsten Horn, Kazutoshi Funakubo, Keiichiro Tashima, Akira Toriumi, Naoka Nagamura, Koji Horiba, Masaharu Oshima, Hirokazu Fukidome, Takayuki Ide
Publikováno v:
Carbon
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors
Autor:
Woojin Song, Akira Toriumi
Publikováno v:
Journal of Applied Physics; 11/14/2017, Vol. 122 Issue 18, p1-7, 7p
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.