Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Akira Miyasaka"'
Publikováno v:
Journal of Geography (Chigaku Zasshi). 130:615-632
Autor:
Hiromasa Suo, Tamotsu Yamashita, Kazuma Eto, Akira Miyasaka, Hiroshi Osawa, Tomohisa Kato, Hajime Okumura
Publikováno v:
Japanese Journal of Applied Physics. 61:105502
We investigated the photoluminescence wavelength emitted at room temperature from novel stacking faults with a complicated stacking sequence in the epitaxial layer on p-type 4H-SiC substrate. From analysis of photoluminescence imaging and synchrotron
Autor:
Akira Miyasaka, Tomohisa Kato, Hajime Okumura, Kazutoshi Kojima, Takashi Hirayama, Masashi Kato, Keisuke Nagaya
Publikováno v:
The Review of scientific instruments. 91(12)
To achieve low on-state and switching losses simultaneously in SiC bipolar devices, the depth distribution of the carrier lifetime within the voltage blocking layer and the techniques used for observing the carrier lifetime distribution are important
Autor:
Hirokuni Asamizu, Hidenori Kitai, Ryosuke Iijima, Johji Nishio, Kazutoshi Kojima, Shinsuke Harada, Akira Miyasaka, Mitsuhiro Kushibe, Ryoji Kosugi
Publikováno v:
Materials Science Forum. 924:432-435
Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs
Publikováno v:
Materials Science Forum. 897:59-62
The epitaxial growth of ~250 μm thick 4H-SiC epilayers has been demanded for ultra-high-voltage power devices. We have attempted to improve the quality of thick epilayers. At the edge of wafer, stacking faults, epi-crown and interfacial dislocations
Autor:
AKIRA MIYASAKA, KEN-ICHI KANO
Publikováno v:
Geoscience Reports of Shizuoka University; 2021, Issue 48, p37-61, 25p
Autor:
Hitoshi Osawa, Akira Miyasaka, Kenji Momose, Jun Norimatsu, Daisuke Muto, Yutaka Tajima, Masuda Tatsuya
Publikováno v:
Materials Science Forum. 858:201-204
For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C
Autor:
Hidekazu Tsuchida, Hajime Okumura, Masashi Kato, Takeshi Tawara, Koichi Murata, Akira Miyasaka, Takashi Hirayama, K. Nagaya, Tomohisa Kato, Kazutoshi Kojima
Publikováno v:
Journal of Applied Physics. 128:105702
The carrier lifetime is an important parameter for high voltage SiC bipolar devices because its distribution in drift layers affects the device performance. Observation techniques for carrier lifetime, along with the development of carrier lifetime c
Autor:
Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Junji Senzaki, Tomohisa Kato, Kensuke Takenaka, Hajime Okumura, Mitsuru Sometani, Yoshiyuki Yonezawa, Kazuma Eto, Akihiro Koyama
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGD14
We fabricated 4H-SiC N-i-P (N-intrinsic-P) diodes using newly developed low-resistivity p-type substrates with higher acceptor concentrations than conventional substrate. N-i-P diodes with 10 μm thick n− drift layers were fabricated on both a low-
Autor:
Yuji Osawa, Hiroshi Osawa, Taichi Okano, Michiya Odawara, Jun Norimatsu, Takayuki Sato, Akira Miyasaka, Daisuke Muto, Yutaka Tajima, Fukada Keisuke, Yoshiaki Kageshima, Kenji Momose
Publikováno v:
Materials Science Forum. :193-196
The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrat