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pro vyhledávání: '"Akira Mitsuiki"'
Autor:
Takashi Hase, Hiroshi Sunamura, Koji Masuzaki, Koichi Takeda, Akira Tanabe, Akira Mitsuiki, Kazuya Uejima, M. Narihiro, N. Furutake, Yoshihiro Hayashi, Makoto Ueki
Publikováno v:
IEEE Transactions on Electron Devices. 64:419-426
A low-power 2-Mb Resistance random access memory (ReRAM) macro is developed in a 90-nm CMOS platform with a 3-nm-thick TaO x /Ta2O5 switching layer of the active area of $0.01~\mu \text{m}^{2}$ . Instability of the ON-state minority bits degrades the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539592b8fcea8a9c3d972b2059947623
https://doi.org/10.1109/ted.2016.2639283
https://doi.org/10.1109/ted.2016.2639283
