Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Akira Kamisawa"'
Publikováno v:
International Journal of Applied Ceramic Technology. 13:265-268
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b803e802af1cd08fa1fd87753e9496d
https://doi.org/10.1111/ijac.12508
https://doi.org/10.1111/ijac.12508
Autor:
Akira Kamisawa, Keiji Okumura, Yuki Nakano, Noriaki Kawamoto, Takukazu Otsuka, Takashi Nakamura, Mineo Miura
Publikováno v:
Silicon Carbide: Power Devices and Sensors, Volume 2
Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We succeeded in fabricating very large area (1 cm 2 ) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab3862cb43abf99762d6ea0fb8e9355
https://doi.org/10.1002/9783527629077.ch12
https://doi.org/10.1002/9783527629077.ch12
Autor:
Mineo Miura, Keiji Okumura, Akira Kamisawa, Takashi Nakamura, Noriaki Kawamoto, Takukazu Otsuka, Yuki Nakano
Publikováno v:
physica status solidi (a). 206:2403-2416
Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We succeeded in fabricating very large area (1 cm 2 ) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ecccba7f66e1211ac5f87e1105f2a33
https://doi.org/10.1002/pssa.200925196
https://doi.org/10.1002/pssa.200925196
Autor:
Naoki Yoshii, Tetsuhiro Tanabe, Akinori Koukitu, Shigetoshi Hosaka, Rui Masuda, Akira Kamisawa, Tetsuo Fujii, Yoshinao Kumagai
Publikováno v:
Journal of Crystal Growth. 311:1056-1059
The effects of growth conditions for ZnO layers grown by halide vapor phase epitaxy (HVPE) on (0 0 0 1) ZnO/sapphire templates are investigated. Micron-sized pyramidal ZnO islands nucleate on the template at the initial growth stage and each island g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68e7b8fc925ff26240a2d6b9dcc811b
https://doi.org/10.1016/j.jcrysgro.2008.12.026
https://doi.org/10.1016/j.jcrysgro.2008.12.026
Publikováno v:
Materials Science Forum. :377-380
We report an experimental investigation of the pits formed at oxidation. The pits were formed by a long time oxidation in a dry or wet atmosphere at high temperature (~ 1200 oC). Although they were observed in (0001) face, they were not in (000-1) fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088cdb66d474813aada288b9b92d6634
https://doi.org/10.4028/www.scientific.net/msf.600-603.377
https://doi.org/10.4028/www.scientific.net/msf.600-603.377
Autor:
Akinori Koukitu, Akira Kamisawa, Shigetoshi Hosaka, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii, Rui Masuda
Publikováno v:
Materials Letters. 64:25-27
Using a halide vapor phase epitaxy (HVPE) technique in which the starting materials are ZnCl 2 generated by the reaction between high purity Zn metal (7 N grade) and Cl 2 gas, and H 2 O, ZnO crystals have been grown at a high temperature of 1000 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caafee6d4f43ad2a428d06d8daee6fe1
https://doi.org/10.1016/j.matlet.2009.09.060
https://doi.org/10.1016/j.matlet.2009.09.060
Publikováno v:
Thin Solid Films. 374:256-261
Low-dielectric-constant fluorinated amorphous carbon films have been prepared from the low global-warming-potential gas of C5F8 by a capacitively coupled plasma enhanced chemical vapor deposition method. Films were prepared at substrate temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9eedf7a850e03a1b7641e61d6ced908
https://doi.org/10.1016/s0040-6090(00)01159-7
https://doi.org/10.1016/s0040-6090(00)01159-7
Publikováno v:
Integrated Ferroelectrics. 21:41-51
Ferroelectric memory is expected not only for a standard memory but also for embedded memories in logic LSIs such as smart cards and microcomputers, because it's electrical characteristics and process compatibility are adequate for embedded. For embe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d218929545efe328457227cfcfbf9730
https://doi.org/10.1080/10584589808202049
https://doi.org/10.1080/10584589808202049
Publikováno v:
Integrated Ferroelectrics. 21:73-82
Sr2Nb2O7 (SNO) family are suitable as ferroelectric materials for ferroelectric memory FETs, because they have low dielectric constant, low coercive field E c and high heat-resistance. In this study, we succeeded to prepare the Sr2(Ta, Nb)2O7 (STN) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf194db60a1d535c834460ede4cae65
https://doi.org/10.1080/10584589808202052
https://doi.org/10.1080/10584589808202052
Autor:
Hidemi Takasu, A. Osawa, K. Nakamura, Koukou Suu, Takanori Ozawa, Akira Kamisawa, Michio Ishikawa, N. Tani, Katsumi Sameshima
Publikováno v:
Integrated Ferroelectrics. 14:59-68
PLZT thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering using a multichamber type production system. The lead (Pb) content in low temperature deposited PLZT films was measured by ICP spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43d7c6322bedad73c170cf1b40275ba
https://doi.org/10.1080/10584589708019977
https://doi.org/10.1080/10584589708019977