Výsledky vyhledávání - "Akira Iishiga"

MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al 0.5 Ga 0.5 N using epitaxial AlN as an underlying layer

Autor: Hideto Miyake, Kazumasa Hiramatsu, Akira Iishiga, Tomohiko Shibata, H. Naoi, Yoshihiro Kida, Mitsuhiro Tanaka

Publikováno v: physica status solidi (c). :2128-2131

Conductivity control of 1-μm-thick Si-doped Al0.5Ga0.5N using an epitaxial AlN underlying layer wasrealized by introducing CH3SiH3 during low-pressure metalorganic vapor phase epitaxy. Cathodoluminescence measurements indicated that luminescence fro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85664322ac2c6077c64df9ee6c66f998
https://doi.org/10.1002/pssc.200303356

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