Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Akio Wakejima"'
Publikováno v:
Electronics Letters, Vol 59, Iss 10, Pp n/a-n/a (2023)
Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow techni
Externí odkaz:
https://doaj.org/article/acd56a6c3924475d95f28c55cc4575c8
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-6 (2022)
Abstract As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate proce
Externí odkaz:
https://doaj.org/article/b031cd73f53e4a8495aa2c96e1ea0869
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 297-300 (2022)
This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with com
Externí odkaz:
https://doaj.org/article/4204a559c40145aa9509b775883f1dc1
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 797-807 (2022)
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/G
Externí odkaz:
https://doaj.org/article/1f5d9dc0ce6a4a54a88802bd65a88721
Autor:
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda
Publikováno v:
Electronics Letters, Vol 57, Iss 21, Pp 810-812 (2021)
Abstract Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the r
Externí odkaz:
https://doaj.org/article/aaa4131eb892405598db2ff407ab0a62
Autor:
Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima
Publikováno v:
IEEE Access, Vol 9, Pp 57046-57053 (2021)
A high temperature stable amplifier characteristics for L-band or 2 GHz was studied using AlGaN/GaN high electron mobility transistors (HEMTs) on 3C-SiC/Si substrate. A crack free, high quality AlGaN/GaN heterostructure on a 6-inch Czochralski (Cz)-S
Externí odkaz:
https://doaj.org/article/649396b6e8854d82826cdc8242c7e3f0
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://doaj.org/article/802bb96512794ca8844a04843f7916f6
Publikováno v:
Electronics Letters, Vol 57, Iss 15, Pp 591-593 (2021)
Abstract This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate. On‐resistance (RON) and electron‐trap‐induced threshold voltage shift (ΔVth)
Externí odkaz:
https://doaj.org/article/c68adc0d93094d5a849b41a64529b061
Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
Publikováno v:
Electronics Letters, Vol 57, Iss 24, Pp 948-949 (2021)
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150
Externí odkaz:
https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/27ec01ae60b04125a04d2c756228a71a