Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Akio Uesugi"'
Autor:
Tomoya Imanishi, Keiju Miyamoto, Shuntaro Higashi, Shunsuke Oki, Akio Uesugi, Koji Sugano, Takanori Aono, Yoshitada Isono
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 143:13-18
Publikováno v:
Microsystem Technologies. 28(5):1281-1290
Microresonator-based optical sensing has been reported to achieve a high measurement resolution of near-infrared light intensity. The light intensity was measured from the resonant frequency shift with the thermal stress of a silicon doubly clamped b
Publikováno v:
Optics Letters. 47(2):373-376
Various nanostructures for single-molecule surface-enhanced Raman spectroscopy (SERS) have been fabricated through a random aggregation process using nanoparticles that can stochastically generate multiple hotspots in the laser spot. This leads to mu
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 141:321-326
Publikováno v:
Microsystem Technologies. 27(3):997-1005
Near-infrared (NIR) imaging has been used for nondestructive and non-contact inspections in various areas, such as food and medicine inspections and medical diagnoses. The short-wavelength infrared light (SWIR) sensor currently used requires a Peltie
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 140:72-78
Publikováno v:
Electronics and Communications in Japan. 104
Publikováno v:
Nanotechnology. 33:505701
The effect of surface potential on the carrier mobility and piezoresistance of core–shell silicon carbide nanowires (SiC NWs) was investigated to realize small and sensitive SiC-microelectromechanical systems sensors. The p-type cubic crystalline S
Publikováno v:
2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS).
Piezoresistive effects of core-shell silicon carbide (SiC) nanowires (NWs) were experimentally evaluated using a FET-type device with single SiC nanowire as a channel, by electrical resistivity measurement with changing gate voltages. The I d -V g ch